Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium D. A. PavlovN. V. BidusD. S. Sorokin XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 1 - 3
Optical lattices of excitons in InGaN/GaN quantum well systems V. V. ChaldyshevA. S. BolshakovM. A. Yagovkina XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 4 - 8
Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer N. V. DikarevaO. V. VikhrovaD. A. Pavlov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 9 - 12
Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures R. Kh. ZhukavinK. A. KovalevskyV. N. Shastin XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 13 - 18
Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates Yu. N. DrozdovM. N. DrozdovA. V. Novikov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 19 - 22
Excitation of plasmonic terahertz photovoltaic effects in a periodic two-dimensional electron system by the attenuated total reflection method D. V. FateevK. V. MashinskyV. V. Popov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 23 - 27
Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping D. A. FirsovL. E. VorobjevA. P. Vasil’ev XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 28 - 32
Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots V. A. GaislerA. V. GaislerA. L. Aseev XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 33 - 38
Energy spectrum and transport in narrow HgTe quantum wells A. V. GermanenkoG. M. MinkovN. N. Mikhailov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 39 - 43
Dipolar excitons indirect in real and momentum space in a GaAs/AlAs heterostructure A. V. GorbunovV. B. Timofeev XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 44 - 49
Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers S. V. KhazanovaV. E. DegtyarevN. V. Baidus XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 50 - 54
Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells S. V. KhazanovaV. E. DegtyarevN. V. Baidus XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 55 - 59
Simulated growth of GaAs nanowires: Catalytic and self-catalyzed growth M. V. KnyazevaA. G. NastovjakN. L. Shwartz XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 60 - 68
Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation A. S. PuzanovS. V. ObolenskiiV. A. Kozlov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 69 - 74
Extension of the radiative lifetime of Wannier-Mott excitons in semiconductor nanoclusters V. A. Kukushkin XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 75 - 80
Spin coherence of the two-dimensional electron gas in a GaAs quantum well A. V. Larionov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 81 - 87
Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning N. A. MaleevS. A. BlokhinV. M. Ustinov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 88 - 91
Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures A. N. AlexeevD. M. KrasovitskyV. G. Sidorov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 92 - 94
Epitaxial growth of hexagonal silicon polytypes on sapphire D. A. PavlovA. V. PirogovA. I. Bobrov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 95 - 98
Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn S. M. PlankinaO. V. VikhrovaP. A. Yunin XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 99 - 103
Ultra-broadband near-field antenna for terahertz plasmonic applications O. V. PolischukV. V. PopovW. Knap XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 104 - 108
Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition B. N. ZvonkovO. V. VikhrovaP. A. Yunin XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 109 - 112
Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling V. Ya. AleshkinS. V. MorozovI. V. Tuzov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 113 - 117
Structural, optical, and current investigations of superlattices with a complex AlGaAs-based unit cell Yu. Yu. RomanovaE. P. DodinN. V. Malekhonova XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 118 - 123
Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy Yu. G. SadofyevV. P. MartovitskyI. S. Vasil’evskii XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 124 - 129
Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy P. E. TeterinD. V. AveryanovV. G. Storchak XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 130 - 133
Characteristics of fullerene-based diode structures on polymer and glass substrates V. V. TravkinG. L. PakhomovA. A. Logunov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 134 - 137