Abstract
The results of measurements of the total terahertz-range photoluminescence of Group-V donors (phosphorus, antimony, bismuth, arsenic) in bulk silicon and SiGe/Si heterostructures depending on the excitation intensity are presented. The signal of bulk silicon was also measured as a function of uniaxial stress. The results of measurement of the dependence of the spontaneous emission intensity on the uniaxial stress is in rather good agreement with theoretical calculations of the relaxation times of excited states of donors in bulk silicon. Comparative measurements of the spontaneous emission from various strained heterostructures showed that the photoluminescence signal is caused by donor-doped silicon regions.
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Original Russian Text © R.Kh. Zhukavin, K.A. Kovalevsky, M.L. Orlov, V.V. Tsyplenkov, N.A. Bekin, A.N. Yablonskiy, P.A. Yunin, S.G. Pavlov, N.V. Abrosimov, H.-W. Hübers, H.H. Radamson, V.N. Shastin, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 1, pp. 15–20.
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Zhukavin, R.K., Kovalevsky, K.A., Orlov, M.L. et al. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures. Semiconductors 49, 13–18 (2015). https://doi.org/10.1134/S1063782615010273
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DOI: https://doi.org/10.1134/S1063782615010273