Pyroelectric properties of the wide-gap CdSe semiconductor in the low-temperature region Yu. V. ShaldinS. MatyiasikN. V. Zhavoronkov Electronic Properties of Semiconductors 05 January 2014 Pages: 1 - 8
On the application of methods of positron annihilation spectroscopy for studying radiation-stimulated processes in chalcogenide glassy semiconductors T. S. KavetskyyV. M. TsmotsA. L. Stepanov Electronic Properties of Semiconductors 05 January 2014 Pages: 9 - 12
Nonlinear ionization of a two-dimensional nanostructure P. A. EminovV. V. SokolovS. V. Gordeeva Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 January 2014 Pages: 13 - 20
Structure and optical properties of heterostructures based on MOCVD (Al x Ga1 − x As1 − y P y )1 − z Si z alloys Alloys P. V. SeredinA. V. GlotovMonica Rinke Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 January 2014 Pages: 21 - 29
Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel E. A. EvropeytsevG. V. KlimkoA. A. Toropov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 January 2014 Pages: 30 - 33
Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface G. V. KlimkoS. V. SorokinS. V. Ivanov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 January 2014 Pages: 34 - 41
Annealing-induced evolution of the structural and morphological properties of a multilayer nanoperiodic SiO x /ZrO2 system containing Si nanoclusters A. V. ErshovD. A. PavlovD. I. Tetelbaum Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 January 2014 Pages: 42 - 45
Energy gaps in the density of states of a graphene buffer layer on silicon carbide: Consideration for the irregularity of layer-substrate coupling S. Yu. Davydov Carbon Systems 05 January 2014 Pages: 46 - 52
Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers W. V. LundinA. E. NikolaevA. F. Tsatsulnikov Physics of Semiconductor Devices 05 January 2014 Pages: 53 - 57
Optimization of the deposition technique of thin ITO films used as transparent conducting contacts for blue and near-UV LEDs I. P. SmirnovaL. K. MarkovS. I. Pavlov Physics of Semiconductor Devices 05 January 2014 Pages: 58 - 62
Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic In0.7Al0.3As/In0.75Ga0.25As/In0.7Al0.3As HEMT nanoheterostructures G. B. GalievS. S. PushkarevP. P. Maltsev Physics of Semiconductor Devices 05 January 2014 Pages: 63 - 68
MHEMT with a power-gain cut-off frequency of f max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs nanoheterostructure D. V. LavrukhinA. E. YachmenevP. P. Maltsev Physics of Semiconductor Devices 05 January 2014 Pages: 69 - 72
Effect of tin on the processes of silicon-nanocrystal formation in amorphous SiO x thin-film matrices V. V. VoitovychR. M. RudenkoV. A. Makara Fabrication, Treatment, and Testing of Materials and Structures 05 January 2014 Pages: 73 - 76
Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission S. A. BlokhinL. Ya. KarachinskyD. Bimberg Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 77 - 82
Current-injection efficiency in semiconductor lasers with a waveguide based on quantum wells A. A. AfonenkoD. V. Ushakov Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 83 - 88
Efficiency of vertical emission from a semiconductor laser waveguide with a diffraction grating A. A. AfonenkoV. Ya. AleshkinA. A. Dubinov Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 89 - 94
High-power pulse-emitting lasers in the 1.5–1.6 μm spectral region P. V. GorlachukYu. L. RyaboshtanV. A. Simakov Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 95 - 98
Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission V. P. KonyaevA. A. MarmalyukV. A. Simakov Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 99 - 103
Investigation of the restoration effect of the radiative parameters of high-power laser diodes based on GaAsP/AlGaAs/GaAs strained heterostructures at a wavelength of 808 nm V. V. BezotosnyiV. A. OleshenkoE. A. Cheshev Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 104 - 108
Limiting parameters of high-power single-stripe laser diodes in the range of 800–808 nm in the pulsed mode V. V. BezotosnyiV. Yu. BondarevE. A. Cheshev Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 109 - 114
Laser emitters (λ = 808 nm) based on AlGaAs/GaAs heterostructures A. A. MarmalyukA. Yu. AndreevI. V. Yarotskaya Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 115 - 119
Single-frequency tunable semiconductor lasers V. P. DuraevS. V. Medvedev Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 120 - 122
Application of diode lasers in light-oxygen cancer therapy S. D. ZakharovI. M. KorochkinF. Frantzen Materials of the 3rd Symposium “semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 123 - 128
Optical-fiber-tip temperature control system for fiber-coupled laser modules in medical equipment S. E. AleksandrovG. A. GavrilovA. L. Ter-Martirosyan Materials of the 3rd Symposium “semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 129 - 134