Microdeformations of the crystal lattice of PbTe1 − x Br x solid solutions M. K. SharovK. A. Kabanova Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 06 November 2014 Pages: 1405 - 1407
Methods for estimating the compensating-impurity concentration in Hg-doped Ge V. F. Bannaya Electronic Properties of Semiconductors 06 November 2014 Pages: 1408 - 1410
A DFT study of BeX (X = S, Se, Te) semiconductor: Modified Becke Johnson (mBJ) potential D. P. RaiM. P. GhimireR. K. Thapa Electronic Properties of Semiconductors 06 November 2014 Pages: 1411 - 1422
Hysteretic phenomena in a 2DEG in the quantum Hall effect regime, studied in a transport experiment M. V. BudantsevD. A. PokhabovA. I. Toropov Electronic Properties of Semiconductors 06 November 2014 Pages: 1423 - 1431
Hall effect in CdTe crystals doped with Sn from the vapor phase V. P. MakhniyI. I. GermanO. A. Parfenyuk Electronic Properties of Semiconductors 06 November 2014 Pages: 1432 - 1433
Physical properties of FeGa2Se4 under an applied alternating current N. N. NiftievO. B. TagievF. M. Mamedov Electronic Properties of Semiconductors 06 November 2014 Pages: 1434 - 1437
Vacancy-donor pairs and their formation in irradiated n-Si V. V. EmtsevN. V. AbrosimovG. A. Oganesyan Electronic Properties of Semiconductors 06 November 2014 Pages: 1438 - 1443
Study of the vibrational states of CdTe and CdHgTe lattices under conditions of the adsorption of ammonia and carbon dioxide O. A. Fedyaeva Spectroscopy, Interaction with Radiation 06 November 2014 Pages: 1444 - 1448
Electron diffraction study of the phase formation of Tl-Fe-Se and kinetics of phase transformations of films TlFeSe2 E. B. AsgerovA. I. MadadzadaR. N. Mehdiyeva Surfaces, Interfaces, and Thin Films 06 November 2014 Pages: 1449 - 1451
Multilayer quantum-dot arrays of high bulk density A. M. NadtochiyA. S. PayusovO. I. Simchuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 November 2014 Pages: 1452 - 1455
Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in n- and p-type silicon L. F. MakarenkoF. P. KorshunovI. Pintilie Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 November 2014 Pages: 1456 - 1462
Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range K. V. MaremyaninD. I. KryzhkovYu. G. Sadof’ev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 November 2014 Pages: 1463 - 1466
Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures N. T. BagraevD. S. GetsB. D. Shanina Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 November 2014 Pages: 1467 - 1480
Sensitization of the photoelectric effect in carbazole- and indolocarbazole-containing poly(phenylquinoline)s by benzothiadiazole acceptor molecules E. L. AleksandrovaV. M. SvetlichnyiA. R. Tameev Amorphous, Vitreous, and Organic Semiconductors 06 November 2014 Pages: 1481 - 1484
Functionalization of nc-Si/SiO2 semiconductor quantum dots by oligonucleotides F. B. BayramovE. D. PoloskinB. H. Bairamov Amorphous, Vitreous, and Organic Semiconductors 06 November 2014 Pages: 1485 - 1489
On the applicability boundaries of the restoration method for the temporal shape of modulated optical signals with a frequency higher than the boundary frequency of a photoresistor E. V. Nikishin Physics of Semiconductor Devices 06 November 2014 Pages: 1490 - 1493
Features of the current-voltage characteristics in thin conductive layers of organic light-emitting diodes V. R. NikitenkoN. A. SannikovaM. N. Strikhanov Physics of Semiconductor Devices 06 November 2014 Pages: 1494 - 1498
Gas-sensitive layers based on fractal-percolation structures V. A. MoshnikovS. S. NalimovaB. I. Seleznev Physics of Semiconductor Devices 06 November 2014 Pages: 1499 - 1503
Specific features of the recombination loss of the photocurrent in n-TiN/p-Si anisotype heterojunctions M. N. SolovanV. V. BrusP. D. Maryanchuk Physics of Semiconductor Devices 06 November 2014 Pages: 1504 - 1506
Planar microcavity containing luminescent diamond particles with embedded silicon-vacancy color centers in its active layer S. A. GrudinkinN. A. FeoktistovV. G. Golubev Physics of Semiconductor Devices 06 November 2014 Pages: 1507 - 1511
Biosensors based on a method for determining the conductance matrix of multiterminal semiconductor nanostructures E. Yu. DanilovskiiN. T. BagraevA. M. Malyarenko Physics of Semiconductor Devices 06 November 2014 Pages: 1512 - 1517
Spectral features of the photoresponse of structures with silicon nanoparticles O. S. KenD. A. AndronikovS. A. Gurevich Physics of Semiconductor Devices 06 November 2014 Pages: 1518 - 1524
Phase formation upon the interaction of thin films in the system Yb1 − x Sm x Te-As2Te3 E. Sh. Hajiyev Fabrication, Treatment, and Testing of Materials and Structures 06 November 2014 Pages: 1525 - 1526
Structure and optical properties of thin Al2O3 films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates P. V. SeredinD. L. GoloschapovI. S. Tarasov Fabrication, Treatment, and Testing of Materials and Structures 06 November 2014 Pages: 1527 - 1531
Dependence of the AlN-Layer growth rate on source-substrate clearance for the sublimation growth method A. A. Wolfson Fabrication, Treatment, and Testing of Materials and Structures 06 November 2014 Pages: 1532 - 1534
Specific features of the hydride vapor-phase epitaxy of nitride materials on a silicon substrate M. G. MynbaevaA. A. GolovatenkoV. I. Nikolaev Fabrication, Treatment, and Testing of Materials and Structures 06 November 2014 Pages: 1535 - 1538
Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix V. N. NevedomskiyN. A. BertB. R. Semyagin Fabrication, Treatment, and Testing of Materials and Structures 06 November 2014 Pages: 1539 - 1543