Physics of switching and memory effects in chalcogenide glassy semiconductors N. A. BogoslovskiyK. D. Tsendin Review 06 May 2012 Pages: 559 - 590
Phase transitions in thin Ge2Sb2Te5 chalcogenide films according to Raman spectroscopy data A. P. AvachevS. P. VikhrovE. I. Terukov Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 06 May 2012 Pages: 591 - 594
Electrophysical properties of solid solutions of silver in PbTe M. K. Sharov Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 06 May 2012 Pages: 595 - 597
Effect of charged dislocation walls on mobility in GaN epitaxial layers S. E. Krasavin Electronic Properties of Semiconductors 06 May 2012 Pages: 598 - 601
Thermal expansion of CuIn5S8 single crystals and the temperature dependence of their band gap I. V. Bodnar Electronic Properties of Semiconductors 06 May 2012 Pages: 602 - 605
Mössbauer and magnetic studies of the ternary compound FeIn2Se4 I. V. BodnarS. A. PauliukavetsYu. A. Fedotova Electronic Properties of Semiconductors 06 May 2012 Pages: 606 - 610
Formation and annealing of radiation defects in tin-doped p-type germanium crystals V. V. LitvinovA. N. PetukhS. B. Lastovskii Electronic Properties of Semiconductors 06 May 2012 Pages: 611 - 614
CdSe semiconducting layers produced by pulse electrolysis C. MitzithraS. HamilakisZ. Loizos Electronic Properties of Semiconductors 06 May 2012 Pages: 615 - 618
Experimental evaluation of the carrier lifetime in GaAs grown at low temperature A. A. PastorP. Yu. SerdobintsevV. V. Chaldyshev Electronic Properties of Semiconductors 06 May 2012 Pages: 619 - 621
Long-range effect of the irradiation of silicon with light on the Schottky-barrier photovoltage D. I. TetelbaumS. V. TikhovYu. A. Mendeleva Surfaces, Interfaces, and Thin Films 06 May 2012 Pages: 622 - 624
Exciton photoluminescence and energy in a percolation cluster of ZnSe quantum dots as a fractal object N. V. BondarM. S. Brodyn Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 May 2012 Pages: 625 - 630
Transport properties of InGaAs/GaAs Heterostructures with δ-doped quantum wells N. V. BaidusV. V. VainbergO. G. Sarbey Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 May 2012 Pages: 631 - 636
Luminescence of CdMnTe/CdMgTe structures with periodically arranged narrow-gap inclusions V. F. AgekyanG. KarczewskiN. G. Filosofov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 May 2012 Pages: 637 - 640
Measurement of Young’s modulus of GaAs nanowires growing obliquely on a substrate P. A. AlekseevM. S. DunaevskiiA. N. Titkov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 May 2012 Pages: 641 - 646
Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si1 − x Ge x buffer layers V. V. StrelchukA. S. NikolenkoA. V. Novikov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 May 2012 Pages: 647 - 654
Mechanism of terahertz photoconductivity in semimetallic HgTe/CdHgTe quantum wells Yu. B. VasilyevN. N. MikhailovG. Nachtwei Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 May 2012 Pages: 655 - 658
Thermoelectric figure of merit for bulk nanostructured composites with distributed parameters A. A. SnarskiiA. K. SarychevA. N. Lagarkov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 06 May 2012 Pages: 659 - 665
Effect of a bichromatic electric field on the current-voltage characteristic of a graphene-based superlattice S. V. KryuchkovE. I. Kuhar Carbon Systems 06 May 2012 Pages: 666 - 672
Nonlinear thermal model of a heterojunction-based light-emitting diode V. A. SergeevA. M. Hodakov Physics of Semiconductor Devices 06 May 2012 Pages: 673 - 677
Silicon field-effect transistors as radiation detectors for the Sub-THz range D. B. ButO. G. GolenkovS. G. Bunchuk Physics of Semiconductor Devices 06 May 2012 Pages: 678 - 683
Influence of inhomogeneous broadening and deliberately introduced disorder on the width of the lasing spectrum of a quantum dot laser V. V. KorenevA. V. SavelyevM. V. Maximov Physics of Semiconductor Devices 06 May 2012 Pages: 684 - 689
Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ0.1 = 4.5 μm) operating at temperatures of 25–80°C N. D. Il’inskayaA. L. ZakgeimA. E. Chernyakov Physics of Semiconductor Devices 06 May 2012 Pages: 690 - 695
Effect of the Cu content and ZnS treatment on the characteristics of synthesized ZnS:(Cu, Cl) electroluminescent phosphors M. M. SychovK. A. OgurtsovA. S. Kozlov Fabrication, Treatment, and Testing of Materials and Structures 06 May 2012 Pages: 696 - 700