Superionic conductivity in TlGaTe2 crystals R. M. SardarliO. A. SamedovF. T. Salmanov Electronic Properties of Semiconductors 18 August 2011 Pages: 975 - 979
Dispersion of the refractive index of epitaxial Pb1 − x Eu x Te (0 ≤ x ≤ 1) alloy layers below the absorption edge D. A. PashkeevYu. G. SelivanovI. I. Zasavitskiy Electronic Properties of Semiconductors 18 August 2011 Pages: 980 - 987
Doping of the Bi1.9Sb0.1Te3 solid solution with Sn impurity M. K. ZhitinskayaS. A. NemovT. E. Svechnikova Electronic Properties of Semiconductors 18 August 2011 Pages: 988 - 992
Study of optical parameters of the Se-As chalcogenide semiconductor system containing EuF3 impurities A. I. IsayevS. I. MekhtiyevaV. Z. Zeynalov Electronic Properties of Semiconductors 18 August 2011 Pages: 993 - 997
Calculation of the electron structure of vacancies and their compensated states in III-VI semiconductors M. A. MehrabovaR. S. Madatov Electronic Properties of Semiconductors 18 August 2011 Pages: 998 - 1005
Photoluminescence in silicon implanted with erbium ions at an elevated temperature N. A. SobolevA. E. KalyadinM. I. Makoviichuk Spectroscopy, Interaction with Radiation 18 August 2011 Pages: 1006 - 1008
The nature of electrical interaction of Schottky contacts N. A. Torkhov Surfaces, Interfaces, and Thin Films 18 August 2011 Pages: 1009 - 1025
Study of the influence of the sulfide and ultraviolet treatment of the n-i-GaAs surface on the parameters of ohmic contacts S. M. AvdeevE. V. ErofeevV. A. Kagadei Surfaces, Interfaces, and Thin Films 18 August 2011 Pages: 1026 - 1031
Studies of the mobility of charge carriers in low-dimensional systems in a transverse DC electric field E. P. SinyavskiiS. A. Karapetyan Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 August 2011 Pages: 1032 - 1034
Eddy currents appearing in a p-n junction in a high microwave field S. H. ShamirzaevG. GulyamovA. G. Gulyamov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 August 2011 Pages: 1035 - 1037
Dielectric and transport properties of thin films precipitated from sols with silicon nanoparticles N. N. KononovS. G. DorofeevE. M. Dianov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 August 2011 Pages: 1038 - 1048
Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties A. O. GolubokYu. B. SamsonenkoG. E. Cirlin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 August 2011 Pages: 1049 - 1052
Photosensitive thin-film In/p-Pb x Sn1 − x S Schottky barriers: Fabrication and properties V. F. GremenokV. Yu. Rud’V. A. Ivanov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 August 2011 Pages: 1053 - 1058
Photosensitized generation of singlet oxygen in powders and aqueous suspensions of silicon nanocrystals Yu. V. RyabchikovI. A. BelogorokhovV. Yu. Timoshenko Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 August 2011 Pages: 1059 - 1063
Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field M. M. SobolevI. M. GadzhievE. L. Portnoi Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 August 2011 Pages: 1064 - 1069
Electronic states in epitaxial graphene fabricated on silicon carbide S. Yu. Davydov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 August 2011 Pages: 1070 - 1076
Mechanisms of charge transport in anisotype n-TiO2/p-CdTe heterojunctions V. V. BrusM. I. IlashchukB. N. Gritsyuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 August 2011 Pages: 1077 - 1081
Piezoelectric effect in GaAs nanowires I. P. SoshnikovDm. E. Afanas’evI. A. Seleznev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 August 2011 Pages: 1082 - 1084
Electrical properties of thin-film composites based on silicon and polypropylene Sh. M. GasanliA. Y. ImanovaU. F. Samedova Amorphous, Vitreous, and Organic Semiconductors 18 August 2011 Pages: 1085 - 1088
Anodization of nanoscale Si layers in silicon-on-insulator structures V. A. AntonovE. V. SpesivtsevI. E. Tyschenko Fabrication, Treatment, and Testing of Materials and Structures 18 August 2011 Pages: 1089 - 1093
Treatment of the surface of blanks for fabrication of CdZnTe-based detectors O. A. FedorenkoN. G. DubinaI. S. Terzin Fabrication, Treatment, and Testing of Materials and Structures 18 August 2011 Pages: 1094 - 1096
Ga2O3 films formed by electrochemical oxidation V. M. KalyginaA. N. ZarubinT. M. Yaskevich Fabrication, Treatment, and Testing of Materials and Structures 18 August 2011 Pages: 1097 - 1102
Fabrication technology of heterojunctions in the lattice of a 2D photonic crystal based on macroporous silicon Yu. A. ZharovaG. V. FedulovaT. S. Perova Fabrication, Treatment, and Testing of Materials and Structures 18 August 2011 Pages: 1103 - 1110