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Study of optical parameters of the Se-As chalcogenide semiconductor system containing EuF3 impurities

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Abstract

Optical properties of chalcogenide vitreous semiconductors of composition Se95As5 containing different amounts of rare-earth metal fluorides (EuF3) are studied, and, on this basis, the fundamental parameters, such as the refractive index and extinction coefficient, are determined. The dependences of these parameters on the content of EuF3 molecules are nonmonotonic: the low content (below 0.25 at %) aids in decreasing the parameters, whereas the high content tends to increase them. From the analysis of the results with consideration for the structural features of chalcogenide vitreous semiconductors of the Se95As5 system (the presence of ordered high-coordinated microregions separated from each other by regions with a lower atomic density), it is concluded that the optical properties of the chalcogenide vitreous semiconductor system under study can be described in the context of Penn’s model.

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Correspondence to S. N. Garibova.

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Original Russian Text © A.I. Isayev, S.I. Mekhtiyeva, S.N. Garibova, R.I. Alekperov, V.Z. Zeynalov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 8, pp. 1026–1030.

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Isayev, A.I., Mekhtiyeva, S.I., Garibova, S.N. et al. Study of optical parameters of the Se-As chalcogenide semiconductor system containing EuF3 impurities. Semiconductors 45, 993–997 (2011). https://doi.org/10.1134/S1063782611080100

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  • DOI: https://doi.org/10.1134/S1063782611080100

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