Abstract
Photoluminescence spectra of n-type silicon upon implantation with erbium ions at 600°C and oxygen ions at room temperature and subsequent annealings at 1100°C in a chlorine-containing atmosphere have been studied. Depending on the annealing duration, photoluminescence spectra at 80 K are dominated by lines of the Er3+ ion or dislocation-related luminescence. The short-wavelength shift of the dislocation-related luminescence line observed at this temperature is due to implantation of erbium ions at an elevated temperature. At room temperature, lines of erbium and dislocation-related luminescence are observed in the spectra, but lines of near-band-edge luminescence predominate.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. J. Kenyon, Semicond. Sci. Technol. 20, R65 (2005).
N. A. Sobolev, Fiz. Tekh. Poluprovodn. 44, 3 (2010) [Semiconductors 44, 1 (2010)].
S. Coffa, G. Franzo, and F. Priolo, MRS Bull. 23, 25 (1998).
N. A. Sobolev, A. M. Emel’yanov, V. V. Zabrodskii, N. V. Zabrodskaya, V. L. Sukhanov, and E. I. Shek, Fiz. Tekh. Poluprovodn. 41, 635 (2007) [Semiconductors 41, 616 (2007)].
N. A. Sobolev, O. B. Gusev, E. I. Shek, V. I. Vdovin, T. G. Yugova, and A. M. Emel’yanov, Appl. Phys. Lett. 72, 3326 (1998).
E. Rimini, Ion Implantation: Basics to Device Fabrication (Kluwer Acad., Boston, 1995).
S. Takeda, Jpn. J. Appl. Phys. 30, L639 (1991).
F. Priolo, S. Coffa, G. Franzo, C. Spinella, A. Camera, and B. Bellany, J. Appl. Phys. 74, 4936 (1993).
J. Michel, J. L. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald, Y.-H. Xie, J. M. Poate, and L. C. Kimerling, J. Appl. Phys. 70, 2672 (1991).
N. A. Sobolev, M. S. Bresler, O. B. Gusev, M. I. Mako- viichuk, E. O. Parshin, and E. I. Shek, Fiz. Tekh. Poluprovodn. 28, 1995 (1994) [Semiconductors 28, 1100 (1994)].
E. A. Shteinman, Fiz. Tverd. Tela 47, 9 (2005) [Phys. Solid State 47, 5 (2005)].
V. Kveder, M. Badylevich, W. Schröter, M. Seibt, E. Steinman, and A. Izotov, Phys. Status Solidi A 202, 901 (2005).
E. O. Sveinbjornsson and J. Weber, Appl. Phys. Lett. 69, 2686 (1996).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © N.A. Sobolev, A.E. Kalyadin, E.I. Shek, V.I. Sakharov, I.T. Serenkov, V.I. Vdovin, E.O. Parshin, M.I. Makoviichuk, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 8, pp. 1038–1040.
Rights and permissions
About this article
Cite this article
Sobolev, N.A., Kalyadin, A.E., Shek, E.I. et al. Photoluminescence in silicon implanted with erbium ions at an elevated temperature. Semiconductors 45, 1006–1008 (2011). https://doi.org/10.1134/S1063782611080197
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782611080197