Coherent phase equilibria in the Zn-Cd-Te system and liquid-phase epitaxy of elastically strained Zn x Cd1 − x Te alloy layers P. P. MoskvinL. V. RashkovetskiiV. A. Moshnikov Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 08 July 2011 Pages: 837 - 844
Thermoelectric properties of BiTeI with addition of BiI3, CuI, and overstoichiometric Bi V. A. KulbachinskiiV. G. KytinA. V. Shevelkov Electronic Properties of Semiconductors 08 July 2011 Pages: 845 - 849
Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor V. A. RomakaP. RoglS. M. Budgerak Electronic Properties of Semiconductors 08 July 2011 Pages: 850 - 856
Transient spectroscopy of Ryvkin’s α centers A. P. Odrinsky Electronic Properties of Semiconductors 08 July 2011 Pages: 857 - 860
Magnetic properties of the FeIn2S4 ternary-compound crystals I. V. BodnarS. V. Trukhanov Electronic Properties of Semiconductors 08 July 2011 Pages: 861 - 864
Deep electron levels in undoped polycrystalline CdTe annealed in liquid Cd E. A. BobrovaY. V. Klevkov Electronic Properties of Semiconductors 08 July 2011 Pages: 865 - 871
Photoluminescence of Hg1 − x Cd x Te based heterostructures grown by molecular-beam epitaxy K. D. MynbaevN. L. BazhenovYu. G. Sidorov Spectroscopy, Interaction with Radiation 08 July 2011 Pages: 872 - 879
Photoluminescence of CdTe grown in conditions considerably deviating from thermodynamic equilibrium V. S. BagaevYu. V. KlevkovA. A. Shepel Spectroscopy, Interaction with Radiation 08 July 2011 Pages: 880 - 887
The effect of morphology and surface composition on radiation resistance of heterogeneous material CdS-PbS I. V. MalyarS. V. Stetsyura Surfaces, Interfaces, and Thin Films 08 July 2011 Pages: 888 - 893
Dependence of conductivity of an illuminated nonideal heterojunction on external bias V. A. BorschakV. A. SmyntynaN. P. Zatovskaya Surfaces, Interfaces, and Thin Films 08 July 2011 Pages: 894 - 899
Longitudinal conductivity of layered charge-ordered crystals in a high quantizing magnetic field P. V. Gorskyi Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 July 2011 Pages: 900 - 906
Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix A. B. TalochkinI. B. Chistokhin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 July 2011 Pages: 907 - 911
Quaternary (FeIn2S4) x (MnIn2S4)1 − x alloys and photosensitive structures on their basis I. V. BodnarV. Yu. RudD. V. Lozhkin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 July 2011 Pages: 912 - 916
Effect of localization in quantum wells and quantum wires on heavy-light hole mixing and acceptor binding energy M. A. SeminaR. A. Suris Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 July 2011 Pages: 917 - 925
Defects in the crystal structure of Cd x Hg1 − x Te layers grown on the Si (310) substrates M. V. YakushevA. K. GutakovskyYu. G. Sidorov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 July 2011 Pages: 926 - 934
Effect of photovoltage on current flow in metal-semiconductor schottky-barrier contacts N. A. Torkhov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 July 2011 Pages: 935 - 943
Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide E. I. GoldmanN. F. KukharskayaG. V. Chucheva Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 July 2011 Pages: 944 - 949
Terbium luminescence in alumina xerogel fabricated in porous anodic alumina matrix under various excitation conditions N. V. GaponenkoV. S. KortovS. Ya. Prislopski Amorphous, Vitreous, and Organic Semiconductors 08 July 2011 Pages: 950 - 953
Electrical and photoelectric properties of nanostructures obtained by electroless etching of silicon D. I. BilenkoV. V. GalushkaE. I. Hasina Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 08 July 2011 Pages: 954 - 957
On the thermal stability of graphone A. I. PodlivaevL. A. Openov Carbon Systems 08 July 2011 Pages: 958 - 961
Effect of AlGaAs-(AlGa) x O y pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots N. V. KryzhanovskayaS. A. BlokhinD. Bimberg Physics of Semiconductor Devices 08 July 2011 Pages: 962 - 965
Effect of the nonlinear saturation of the gain on the peak modulation frequency in lasers based on self-assembled quantum dots A. E. ZhukovE. M. ArakcheevaA. V. Savelyev Physics of Semiconductor Devices 08 July 2011 Pages: 966 - 970