Formation of phases in the films of a Ag-In-Se system D. I. IsmayilovN. K. Kerimova Atomic Structure and Nonelectronic Properties of Semiconductors 15 September 2009 Pages: 1111 - 1114
Features of the mechanisms of generation and “Healing” of structural defects in the heavily doped intermetallic semiconductor n-ZrNiSn V. A. RomakaE. K. HlilA. M. Goryn Atomic Structure and Nonelectronic Properties of Semiconductors 15 September 2009 Pages: 1115 - 1123
The mechanism of generation of the donor- and acceptor-type defects in the n-TiNiSn semiconductor heavily doped with Co impurity V. A. RomakaYu. V. StadnykA. M. Goryn Electronic and Optical Properties of Semiconductors 15 September 2009 Pages: 1124 - 1130
Effect of a high electric field on the conductivity of MnGa2S4, MnIn2S4, and MnGaInS4 single crystals N. N. NiftievO. B. Tagiev Electronic and Optical Properties of Semiconductors 15 September 2009 Pages: 1131 - 1133
Effect of the magnetic phase transition on the charge transport in layered semiconductor ferromagnets TlCrS2 and TlCrSe2 R. G. VeliyevR. Z. SadikhovA. I. Jabbarov Electronic and Optical Properties of Semiconductors 15 September 2009 Pages: 1134 - 1137
Electrical properties of In2Se3 single crystals and photosensitivity of Al/In2Se3 Schottky barriers I. V. BodnarG. A. IlchukM. Serginov Electronic and Optical Properties of Semiconductors 15 September 2009 Pages: 1138 - 1141
The influence of the magnetic field on the effect of drag of electrons by phonons in n-Cd x Hg1 − x Te S. A. AliyevE. I. ZulfigarovZ. F. Agayev Electronic and Optical Properties of Semiconductors 15 September 2009 Pages: 1142 - 1145
Electronic properties and pinning of the Fermi level in irradiated II–IV–V2 semiconductors V. N. Brudnyi Electronic and Optical Properties of Semiconductors 15 September 2009 Pages: 1146 - 1154
Electron spectrum and scattering of charge carriers in PbTe:(Na + Te) L. V. ProkofievaD. A. Pshenay-SeverinA. A. Shabaldin Electronic and Optical Properties of Semiconductors 15 September 2009 Pages: 1155 - 1158
Photoluminescence of silicon after deposition of polycrystalline diamond films D. F. AminevV. S. BagaevA. V. Savel’ev Semiconductor Structures, Interfaces, and Surfaces 15 September 2009 Pages: 1159 - 1163
Flow of the current along metallic shunts in ohmic contacts to wide-gap III–V semiconductors T. V. BlankYu. A. GoldbergE. A. Posse Semiconcductor Structures, Interfaces, and Surfaces 15 September 2009 Pages: 1164 - 1169
Eddy currents in the p–n junction in a microwave field S. H. ShamirzaevG. GulyamovA. G. Gulyamov Semiconductor Structures, Interfaces, and Surfaces 15 September 2009 Pages: 1170 - 1173
Behavior of the phonon replicas of the acceptor-bound exciton’s recombination line in GaAs/AlGaAs quantum wells P. V. PetrovYu. L. IvanovN. S. Averkiev Low-Dimensional Systems 15 September 2009 Pages: 1174 - 1176
Transport of electrons in a GaAs quantum well in high electric fields J. PoželaK. PoželaV. Juciené Low-Dimensional Systems 15 September 2009 Pages: 1177 - 1181
The simplest electron-hole complexes localized at longitudinal fluctuations in quantum wires M. A. SeminaR. A. SergeevR. A. Suris Low-Dimensional Systems 15 September 2009 Pages: 1182 - 1192
Local structure of germanium-sulfur, germanium-selenium, and germanium-tellurium vitreous alloys G. A. BordovskyE. I. TerukovP. P. Seregin Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 15 September 2009 Pages: 1193 - 1197
Mechanisms of formation of N–S transition in nonisothermal I–V characteristics of a p–i–n diode A. V. GorbatyukF. B. Serkov Physics of Semiconductor Devices 15 September 2009 Pages: 1198 - 1204
Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes A. V. VerkhovtsevaV. A. Gergel Physics of Semiconductor Devices 15 September 2009 Pages: 1205 - 1208
Experimental 4H-SiC junction-barrier Schottky (JBS) diodes P. A. IvanovI. V. GrekhovO. I. Kon’kov Physics of Semiconductor Devices 15 September 2009 Pages: 1209 - 1212
A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD D. A. VinokurovM. A. LaduginI. S. Tarasov Physics of Semiconductor Devices 15 September 2009 Pages: 1213 - 1216
Photoelectric signatures of CdZnTe crystals A. V. ButV. P. Migal’A. S. Fomin Fabrication, Treatment, and Testing of Materials and Structures 15 September 2009 Pages: 1217 - 1220
Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga x In1 − x P/GaAs(100) heterostructures P. V. SeredinE. P. DomashevskayaI. S. Tarasov Fabrication, Treatment, and Testing of Materials and Structures 15 September 2009 Pages: 1221 - 1225
Nonlinear effects during the growth of semiconductor nanowires V. G. DubrovskiiN. V. SibirevM. A. Timofeeva Fabrication, Treatment, and Testing of Materials and Structures 15 September 2009 Pages: 1226 - 1234
Crystal perfection of GaP films grown on Si substrates by solid-source MBE with atomic hydrogen M. A. PutuatoYu. B. BolkhovityanovA. K. Gutakovskii Fabrication, Treatment, and Testing of Materials and Structures 15 September 2009 Pages: 1235 - 1239
Integrated diagnostics of heterostructures with QW layers S. G. KonnikovA. A. GutkinM. A. Yagovkina Fabrication, Treatment, and Testing of Materials and Structures 15 September 2009 Pages: 1240 - 1247
Optimization of structural perfection of 4H-polytype silicon carbide ingots D. D. AvrovS. I. DorozhkinA. Yu. Fadeev Fabrication, Treatment, and Testing of Materials and Structures 15 September 2009 Pages: 1248 - 1254