Adsorption of sodium atoms on the (111) germanium surface S. Yu. Davydov Atomic Structure and Nonelectronic Propertties of Semiconductors 11 July 2009 Pages: 833 - 836
Establishment of specific features of electron localization at U − centers in semiconductors from thermally stimulated currents A. G. NikitinaV. V. Zuev Electrical and Optical Properties of Semiconductors 11 July 2009 Pages: 837 - 840
Effect of the spectrum of elementary excitations on spinodal decomposition of semiconductor alloys A. Yu. MaslovO. V. Proshina Electrical and Optical Properties of Semiconductors 11 July 2009 Pages: 841 - 845
Effect of self-compensation on the electron lifetime in gallium-doped cadmium telluride E. V. RabenokM. V. GalanovichI. N. Odin Electrical and Optical Properties of Semiconductors 11 July 2009 Pages: 846 - 851
Sensitized anti-stokes luminescence centers in AgCl crystals M. S. SmirnovO. V. OvchinnikovM. A. Efimova Electrical and Optical Properties of Semiconductors 11 July 2009 Pages: 852 - 857
Photosensitive structures based on ZnP2 single crystals of monoclinic and tetragonal modifications: Fabrication and properties V. Yu. RudYu. V. RudT. N. Ushakova Electrical and Optical Properties of Semiconductors 11 July 2009 Pages: 858 - 864
Au-TiB x -n-6H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts O. A. AgeevA. E. BelyaevA. V. Sachenko Semiconductor Structures, Interfaces, and Surfaces 11 July 2009 Pages: 865 - 871
Radiation effects in multilayer ohmic contacts Au-Ti-Al-Ti-n-GaN A. E. BelyaevN. S. BoltovetsYu. N. Sveshnikov Semiconductor Structures, Interfaces, and Surfaces 11 July 2009 Pages: 872 - 876
Optically active centers in Si/Si1 − x Ge x :Er heterostructures containing Er3+ ions L. V. KrasilnikovaM. V. StrepikhovaV. G. Shengurov Semiconductor Structures, Interfaces, and Surfaces 11 July 2009 Pages: 877 - 884
Simulation of interaction between nickel and silicon carbide during the formation of ohmic contacts O. V. AleksandrovV. V. Kozlovski Semiconductor Structures, Interfaces, and Surfaces 11 July 2009 Pages: 885 - 891
Determination of the mechanisms of photovoltage generation in semiconductor films from spectral dependences of the absorption coefficient and photovoltage G. A. Nabiyev Semiconductor Structures, Interfaces, and Surfaces 11 July 2009 Pages: 892 - 893
Mechanisms of anomalous photovoltage Effect in CdTe films G. A. Nabiev Semiconductor Structures, Interfaces, and Surfaces 11 July 2009 Pages: 894 - 895
Spin-orbit interaction of charge carriers with impurities in aligned Ge0.99Me0.01 (Me = Mn, Cr, Co, Fe) nanowires R. B. MorgunovA. I. DmitrievO. L. Kazakova Low-Dimensional Systems 11 July 2009 Pages: 896 - 900
Anisotropy of the relaxation of the electron spin caused by competition of the Rashba and Dresselhaus mechanisms A. M. SmirnovV. A. OseptsovaS. A. Eliseev Low-Dimensional Systems 11 July 2009 Pages: 901 - 905
Properties of GaAsN nanowires grown by magnetron-sputtering deposition I. P. SoshnikovG. E. CirlinS. I. Troshkov Low-Dimensional Systems 11 July 2009 Pages: 906 - 910
IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers S. P. Kozyrev Low-Dimensional Systems 11 July 2009 Pages: 911 - 914
Optical study of platinum-modified amorphous carbon A. D. RemenyukT. K. ZvonarevaT. S. Perova Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 11 July 2009 Pages: 915 - 920
Electrical conductivity of amorphous films of chalcogenide compounds in high electric fields E. N. VoronkovS. A. Kozyukhin Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 11 July 2009 Pages: 921 - 924
Effect of ethanol on optical and electrical parameters of porous silicon V. V. BolotovYu. A. Sten’kinS. N. Nesov Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 11 July 2009 Pages: 925 - 928
Electron spin resonance and photoluminescence in pyrolytic silicon nitride films irradiated with argon and molecular ions E. S. DemidovN. A. DobychinV. V. Sdobnyakov Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 11 July 2009 Pages: 929 - 933
Dynamics of local micro-breakdown in the Geiger mode of avalanche photodiodes A. V. VerhovtsevaV. A. Gergel Physics of Semiconductor Devices 11 July 2009 Pages: 934 - 938
High-performance InGaP/GaAs pnp δ-doped heterojunction bipolar transistor Jung-Hui TsaiShao-Yen ChiuDer-Feng Guo Physics of Semiconductor Devices 11 July 2009 Pages: 939 - 942
Solid-state image converters on the basis of the GaAs/ZnS structures V. M. KalyginaA. V. TyazhevT. M. Yaskevich Physics of Semiconductor Devices 11 July 2009 Pages: 943 - 947
Study of deep centers in microplasma channels of silicon epitaxial avalanche diodes V. K. IonychevA. N. Rebrov Physics of Semiconductor Devices 11 July 2009 Pages: 948 - 952
Operation of a semiconductor opening switch at the pumping time of a microsecond and low current density P. V. VasilievS. K. LyubutinS. O. Cholakh Physics of Semiconductor Devices 11 July 2009 Pages: 953 - 956
Simulation of the subnanosecond cutoff of current in high-power semiconductor diodes S. N. RukinS. N. Tsyranov Physics of Semiconductor Devices 11 July 2009 Pages: 957 - 962
Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers W. V. LundinA. V. SakharovA. F. Tsatsulnikov Fabrication, Treatment, and Testing of Materials and Structures 11 July 2009 Pages: 963 - 967
Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride P. G. SennikovS. V. GolubevH. -J. Pohl Fabrication, Treatment, and Testing of Materials and Structures 11 July 2009 Pages: 968 - 972