Abstract
The effect of ethanol vapor adsorption on the properties of porous silicon-based structures was studied by Raman scattering, infrared spectroscopy, and I–V characteristics. A decrease in the resistance of porous silicon layers and a simultaneous increase in the intensity of the band of infrared absorption caused by the presence of (OH)−…x(OH)− (x = 1, 2, …) groups upon exposure to ethanol vapor and vice versa in the case of degassing were detected. The observed effect is attributed to a change in the depletion region in por-Si skeleton elements due to the electrostatic interaction of (OH)− groups with positively charged surface defects. The effect of hydrogen-bonded Si-OH…OH-C2H5 centers on the increase in the silicon conductivity is discussed.
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Original Russian Text © V.V. Bolotov, Yu.A. Sten’kin, V.E. Roslikov, V.E. Kang, I.V. Ponomareva, S.N. Nesov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 7, pp. 957–960.
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Bolotov, V.V., Sten’kin, Y.A., Roslikov, V.E. et al. Effect of ethanol on optical and electrical parameters of porous silicon. Semiconductors 43, 925–928 (2009). https://doi.org/10.1134/S1063782609070197
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DOI: https://doi.org/10.1134/S1063782609070197