Mechanism of local amorphization of a heavily doped Ti1 − x V x CoSb intermetallic semiconductor V. A. RomakaYu. V. StadnykYu. K. Gorelenko Electronic and Optical Properties of Semiconductors 11 July 2008 Pages: 753 - 760
Fundamental spectra of optical functions of ferroelectric sodium nitrite V. V. SobolevA. I. KaluginS. G. Iskhakova Electronic and Optical Properties of Semiconductors 11 July 2008 Pages: 761 - 765
Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures M. M. MezdroginaV. V. KrivolapchukA. V. Osipov Semiconductor Structures, Interfaces, and Surfaces 11 July 2008 Pages: 766 - 771
CdTe as a passivating layer in CdTe/HgCdTe heterostructures I. S. VirtI. V. KuriloR. N. Smirnov Semiconductor Structures, Interfaces, and Surfaces 11 July 2008 Pages: 772 - 776
Properties of barrier contacts with nanosize TiB x layers to InP I. N. ArsentyevA. V. BobylE. V. Russu Semiconductor Structures, Interfaces, and Surfaces 11 July 2008 Pages: 777 - 782
Admittance and nonlinear capacitance of a multilayer metal-semiconductor structure N. V. VostokovV. I. Shashkin Semiconductor Structures, Interfaces, and Surfaces 11 July 2008 Pages: 783 - 787
InGaN nanoinclusions in an AlGaN matrix V. S. SizovA. F. Tsatsul’nikovV. V. Lundin Low-Dimensional Systems 11 July 2008 Pages: 788 - 793
Periodic formation of transient population inversion for intersubband laser transitions in quantum wells V. A. Kukushkin Low-Dimensional Systems 11 July 2008 Pages: 794 - 799
Effect of oxygen on structure and electronic properties of silicon nanoclusters Si n (n = 5, 6, 10, 18) A. A. GnidenkoV. G. Zavodinsky Low-Dimensional Systems 11 July 2008 Pages: 800 - 804
Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates V. V. MamutinA. Yu. EgorovE. V. Pirogov Low-Dimensional Systems 11 July 2008 Pages: 805 - 812
Relaxation of excitons in semimagnetic asymmetric double quantum wells S. V. ZaitsevA. S. BrichkinG. Bacher Low-Dimensional Systems 11 July 2008 Pages: 813 - 827
Exchange enhancement of the g factor in InAs/AlSb heterostructures V. Ya. AleshkinV. I. GavrilenkoK. E. Spirin Low-Dimensional Systems 11 July 2008 Pages: 828 - 833
Measurement and comparison of silicon p-i-n-photodiodes with ac impedance at different voltages S. ÖzdenH. BayhanM. Bayhan Physics of Semiconductor Devices 11 July 2008 Pages: 834 - 837
Electric-field control of the occupancy of the upper laser subband in quantum-well structures with asymmetric barriers designed for unipolar laser operation Yu. A. AleshchenkoA. E. ZhukovV. M. Ustinov Physics of Semiconductor Devices 11 July 2008 Pages: 838 - 844
Optical confinement in laser diodes based on nitrides of Group III elements. Part 1: Theory and optical properties of materials T. E. SlobodyanK. A. BulashevichS. Yu. Karpov Physics of Semiconductor Devices 11 July 2008 Pages: 845 - 851
Optical confinement in laser diodes based on nitrides of Group III elements. Part 2: Analysis of heterostructures on various substrates T. E. SlobodyanK. A. BulashevichS. Yu. Karpov Physics of Semiconductor Devices 11 July 2008 Pages: 852 - 857
Pulsed breakdown of 4H-SiC Schottky diodes terminated with a boron-implanted p-n junction P. A. IvanovI. V. GrekhovT. P. Samsonova Physics of Semiconductor Devices 11 July 2008 Pages: 858 - 861
High-power laser diodes with an emission wavelength of 835 nm on the basis of various types of heterostructures A. V. MurashovaD. A. VinokurovC. Y. Lee Physics of Semiconductor Devices 11 July 2008 Pages: 862 - 867
Changes in characteristics of gadolinium, titanium, and erbium oxide films on the SiC surface under microwave treatment Yu. Yu. BacherikovR. V. KonakovaV. V. Polyakov Fabrication, Treatment, and Testing of Materials and Structures 11 July 2008 Pages: 868 - 872
Formation kinetics of various types of hydrogen-related donors in proton-implanted silicon Yu. M. PokotiloA. N. PetukhO. A. Dzichkovski Fabrication, Treatment, and Testing of Materials and Structures 11 July 2008 Pages: 873 - 875