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Pulsed breakdown of 4H-SiC Schottky diodes terminated with a boron-implanted p-n junction

  • Physics of Semiconductor Devices
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Abstract

Pulsed reverse current-voltage characteristics have been measured in the breakdown region for 1-kV 4H-SiC Schottky diodes terminated with a boron-implanted p-n junction. It was shown that the dynamic breakdown voltage of the diodes increases as the pulses become shorter. Owing to the homogeneous avalanche formation at the edge of the guard p-n junction and to the high differential resistance in the breakdown region, the diodes sustain without degradation a pulsed reverse voltage substantially exceeding the static breakdown threshold. Characteristic features of the pulsed breakdown are considered in relation to the specific properties of the boron-implanted guard p-n junction.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    P. A. Ivanov, I. V. Grekhov, A. S. Potapov & T. P. Samsonova

Authors
  1. P. A. Ivanov
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  2. I. V. Grekhov
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  3. A. S. Potapov
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  4. T. P. Samsonova
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Corresponding author

Correspondence to P. A. Ivanov.

Additional information

Original Russian Text © P.A. Ivanov, I.V. Grekhov, A.S. Potapov, T.P. Samsonova, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 7, pp. 878–881.

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Ivanov, P.A., Grekhov, I.V., Potapov, A.S. et al. Pulsed breakdown of 4H-SiC Schottky diodes terminated with a boron-implanted p-n junction. Semiconductors 42, 858–861 (2008). https://doi.org/10.1134/S1063782608070178

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  • DOI: https://doi.org/10.1134/S1063782608070178

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