Long-range effects of ion irradiation, chemical etching, and mechanical grinding on relaxation of a solid solution of iron in gallium phosphide E. S. DemidovA. B. GromoglasovaV. V. Karzanov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 983 - 988
Oxygen-containing radiation defects in Si1−x Gex Yu. V. PomozovM. G. SosninM. Höhne Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 989 - 993
Specific features of the behavior of oxygen in Sn-doped silicon Yu. V. PomozovM. G. SosninV. I. Yashnik Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 994 - 997
Early stages of oxygen precipitation in silicon: The effect of hydrogen V. P. MarkevichL. I. MurinM. Suezawa Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 998 - 1003
Generation of bulk defects in some semiconductors by laser radiation in the transparency region of the crystal S. V. Plyatsko Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1004 - 1010
Electron mobility and electron scattering by polar optical phonons in heterostructure quantum wells J. PoželaK. PoželaV. Jucienė Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1011 - 1015
Radiation defects in n-4H-SiC irradiated with 8-MeV protons A. A. LebedevA. I. VeingerA. M. Strel’chuk Electronic and Optical Properties of Semiconductors Pages: 1016 - 1020
Breakdown of shallow-level donors in Si and Ge on the insulating side of a strain-induced metal-insulator transition S. I. BudzulyakE. F. VengerL. I. Panasyuk Electronic and Optical Properties of Semiconductors Pages: 1021 - 1023
Mechanism of high radiation stability of electrical parameters of SmS thin films L. N. Vasil’evV. V. KaminskiiN. V. Sharenkova Electronic and Optical Properties of Semiconductors Pages: 1024 - 1026
Influence of erbium ion implantation dose on characteristics of (111) Si:(Er, O) light-emitting diodes operating in p-n-junction breakdown mode N. A. SobolevA. M. Emel’yanovYu. A. Nikolaev Electronic and Optical Properties of Semiconductors Pages: 1027 - 1030
Optical bistability and instability in a semiconductor in the case where the relaxation time of free charge carriers and their equilibrium concentration are temperature-dependent O. S. BondarenkoT. M. LysakV. A. Trofimov Electronic and Optical Properties of Semiconductors Pages: 1031 - 1044
Generalized multilayer model for the quantitative analysis of the electromodulation components of the electroreflectance and photoreflectance spectra of semiconductors in the region of the E 0 fundamental transition R. V. Kuz’menkoA. V. GanzhaS. Hildebrandt Electronic and Optical Properties of Semiconductors Pages: 1045 - 1051
Thermal emf in a bipolar semiconductor with phonon drag of carriers A. KoninR. Raguotis Electronic and Optical Properties of Semiconductors Pages: 1052 - 1053
Electrical conductivity of silicon-on-insulator structures prepared by bonding silicon wafers to a substrate using hydrogen implantation I. V. AntonovaV. F. Stas’A. K. Gutakovskii Semiconductor Structures, Interfaces, and Surfaces Pages: 1054 - 1057
Fabrication and photoelectric properties of oxide/CdTe structures G. A. Il’chukV. I. Ivanov-OmskiiN. A. Ukrainets Semiconductor Structures, Interfaces, and Surfaces Pages: 1058 - 1061
The transient photomagnetic effect in multilayer structures with p-n junctions V. N. AgarevV. I. Stafeev Semiconductor Structures, Interfaces, and Surfaces Pages: 1062 - 1063
Photovoltaic effect in a-Si:H/n-InSe heterostructures R. N. BekimbetovYu. A. NikolaevE. I. Terukov Semiconductor Structures, Interfaces, and Surfaces Pages: 1064 - 1067
Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters P. N. BrunkovV. V. ChaldyshevB. R. Semyagin Low-Dimensional Systems Pages: 1068 - 1072
Diagnostics of the hot-hole distribution function in quantum wells in a strong electric field V. Ya. AleshkinD. M. GaponovaE. A. Uskova Low-Dimensional Systems Pages: 1073 - 1078
Size-quantization stark effect in quasi-zero-dimensional semiconductor structures S. I. Pokutnii Low-Dimensional Systems Pages: 1079 - 1084
Nanostructured a-Si:H films obtained by silane decomposition in a magnetron chamber O. A. GolikovaM. M. KazaninE. V. Bogdanova Amorphous, Vitreous, and Porous Semiconductors Pages: 1085 - 1089
On the mechanism of porous silicon formation D. N. GoryachevL. V. BelyakovO. M. Sreseli Amorphous, Vitreous, and Porous Semiconductors Pages: 1090 - 1093
Elemental composition and electrical properties of (a-C:H):Cu films prepared by magnetron sputtering T. K. ZvonarevaV. M. LebedevV. I. Ivanov-Omskii Physics of Semiconductor Devices Pages: 1094 - 1099
Tunable InAsSb/InAsSbP laser with a low radiation divergence in the p-n-junction plane A. P. AstakhovaT. N. DanilovaYu. P. Yakovlev Physics of Semiconductor Devices Pages: 1100 - 1102