Abstract
Laser-stimulated dissociation of regions enriched with metal and redistribution of point defects in the bulk of a semiconductor crystal under the effect of infrared laser radiation (for photon energies lower than the band gap) were studied. It is shown that the defect-generation rate depends on the power density and wavelength of the laser radiation and on the impurity concentration. Two mechanisms of migration for the laser-induced defects were ascertained, and the activation energies for migration during laser irradiation and after irradiation was terminated were estimated.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 9, 2000, pp. 1046–1052.
Original Russian Text Copyright © 2000 by Plyatsko.
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Plyatsko, S.V. Generation of bulk defects in some semiconductors by laser radiation in the transparency region of the crystal. Semiconductors 34, 1004–1010 (2000). https://doi.org/10.1134/1.1309406
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DOI: https://doi.org/10.1134/1.1309406