Radiation defects in n-6H-SiC irradiated with 8 MeV protons A. A. LebedevA. I. VeingerA. M. Strel’chuk Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 861 - 866
TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate N. A. CherkashinN. A. BertC. T. Foxon Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 867 - 871
Properties of precisely compensated semiconductors S. Zh. Karazhanov Electronic and Optical Properties of Semiconductors Pages: 872 - 879
Electrical properties of semiconductors with pair defects S. Zh. KarazhanovÉ. V. Kanaki Electronic and Optical Properties of Semiconductors Pages: 880 - 885
Transition of a noncavity bistable exciton system driven by correlated external noise to a strongly absorbing state Yu. V. Gudyma Electronic and Optical Properties of Semiconductors Pages: 886 - 888
Variable-range-hopping conduction via indium impurity states in Pb0.78Sn0.22Te solid solution S. A. NemovV. É. GasumyantsD. A. Potapova Electronic and Optical Properties of Semiconductors Pages: 889 - 890
Spectral shift of photoluminescence bands of the (SiC)1−x (AlN)x epitaxial films due to laser annealing G. K. SafaralievYu. N. ÉmirovB. A. Bilalov Electronic and Optical Properties of Semiconductors Pages: 891 - 893
Gallium-induced deep level in Pb1−x GexTe alloys E. P. SkipetrovE. A. ZverevaE. I. Slyn’ko Electronic and Optical Properties of Semiconductors Pages: 894 - 896
Hole concentration and thermoelectric figure of merit for Pb1−x SnxTe:Te solid solutions G. T. AlekseevaM. V. VedernikovYu. I. Ravich Electronic and Optical Properties of Semiconductors Pages: 897 - 901
Fine structure of the dielectric-function spectrum in diamond V. V. SobolevA. P. TimonovV. Val. Sobolev Electronic and Optical Properties of Semiconductors Pages: 902 - 907
Mutual electron-phonon drag and low-temperature anomalies of thermoelectric and thermomagnetic effects in HgSe:Fe crystals I. G. KuleevI. Yu. Arapova Electronic and Optical Properties of Semiconductors Pages: 908 - 915
Ionization energy of copper in Hg0.8Cd0.2Te crystals under conditions of light and intermediate doping V. V. Bogoboyashchii Electronic and Optical Properties of Semiconductors Pages: 916 - 923
Nonlinear optical absorption in a heavily doped degenerate n-GaAs V. L. MalevichI. A. Utkin Electronic and Optical Properties of Semiconductors Pages: 924 - 926
Tunnel light-emitting Si:(Er,O) diodes with a short rise time of Er3+ electroluminescence under breakdown conditions A. M. Emel’yanovN. A. SobolevP. E. Khakuashev Semiconductor Structures, Interfaces, and Surfaces Pages: 927 - 930
Distribution of mobile ions in thin insulator films at the insulator-semiconductor interface S. G. DmitrievYu. V. Markin Semiconductor Structures, Interfaces, and Surfaces Pages: 931 - 936
The dislocation nature of a tunneling excess current in GaAs-Ni structures modified by laser radiation K. K. DzhamanbalinA. G. Dmitriev Semiconductor Structures, Interfaces, and Surfaces Pages: 937 - 938
Thermodynamic and kinetic aspects of reconstruction transitions at the GaAs(001) surface Yu. G. GalitsynV. G. MansurovA. I. Toropov Semiconductor Structures, Interfaces, and Surfaces Pages: 939 - 944
Electron-ion exchange at the insulator-semiconductor interfaces and its influence on ion transport in the insulating layer E. I. Gol’dman Semiconductor Structures, Interfaces, and Surfaces Pages: 945 - 954
Properties of diode heterostructures based on nanocrystalline n-SnO2 on p-Si under the conditions of gas Adsorption R. B. Vasil’evA. M. Gas’kovB. A. Akimov Semiconductor Structures, Interfaces, and Surfaces Pages: 955 - 959
Band offsets in Zn 1−x Cd x Te/ZnTe single-quantum-well structures grown by molecular-beam epitaxy on GaAs(001) substrates V. I. KozlovskiiV. G. LitvinovYu. G. Sadof’ev Low-Dimensional Systems Pages: 960 - 964
The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers G. A. KachurinS. G. YanovskayaH. Bernas Low-Dimensional Systems Pages: 965 - 970
High-frequency properties of avalanche multiplication of photocarriers in structures with negative feedback T. M. BurbaevV. A. KurbatovV. A. Kholodnov Physics of Semiconductor Devices Pages: 971 - 974
Parameters of metal one-electron transistors based on various materials I. I. AbramovE. G. Novik Physics of Semiconductor Devices Pages: 975 - 980
