Abstract
The analysis of the key factors governing the formation of point and linear defects in crystals exposed to pulsed laser radiation showed that the concentration of intrinsic defects formed in actual experimental practice is insufficient to ensure multistage tunneling of electrons through a thick space-charge layer. It is concluded that dislocations play a decisive role in the origination of a tunneling excess current. This conclusion is also supported by the fact that the behavior of a tunneling excess current under repeated irradiation of the structures studied is similar to the features of plastic deformation under repeated loading.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 8, 2000, pp. 976–977.
Original Russian Text Copyright © 2000 by Dzhamanbalin, Dmitriev.
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Dzhamanbalin, K.K., Dmitriev, A.G. The dislocation nature of a tunneling excess current in GaAs-Ni structures modified by laser radiation. Semiconductors 34, 937–938 (2000). https://doi.org/10.1134/1.1188104
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DOI: https://doi.org/10.1134/1.1188104