Distribution of hydrogen in silicon and silicon carbide following high-temperature proton irradiation V. V. KozlovskiiV. A. Kozlov Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1265 - 1266
Electronic properties of ZnGeP2 crystals obtained by a solid-phase reaction A. A. VaipolinYu. V. Rud’V. Yu. Rud’ Electronic and Optical Properties of Semiconductors Pages: 1267 - 1271
Behavior of manganese impurities in Hg3In2Te6 O. G. GrushkaZ. M. GrushkaV. S. Gerasimenko Electronic and Optical Properties of Semiconductors Pages: 1272 - 1275
Photoelectric properties of Hg1−x CdxTe single crystals grown from the vapor phase S. S. VarshavaI. V. KuriloD. I. Tsyutsyura Electronic and Optical Properties of Semiconductors Pages: 1276 - 1278
Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion) V. B. NeimashE. A. PuzenkoN. N. Kras’ko Electronic and Optical Properties of Semiconductors Pages: 1279 - 1283
Donor-acceptor photoluminescence of weakly compensated GaN:Mg V. Yu. NekrasovL. V. BelyakovN. N. Zinov’ev Electronic and Optical Properties of Semiconductors Pages: 1284 - 1290
Cascade capture of electrons by dislocations in many-valley semiconductors Z. A. Veliev Electronic and Optical Properties of Semiconductors Pages: 1291 - 1292
Electrical properties of Hg1−x MnxTe-based photodiodes L. A. KosyachenkoI. M. RarenkoWeiguo Sun Semiconductors Structures, Interface, and Surfaces Pages: 1293 - 1296
Drag current for ionization of impurities by an electromagnetic wave in a semiconductor superlattice M. V. VyazovskiiG. A. Syrodoev Semiconductors Structures, Interface, and Surfaces Pages: 1297 - 1300
Position of the Fermi level on an indium arsenide surface treated in sulfur vapor N. N. BezryadinE. A. TatokhinI. N. Arsent’ev Semiconductors Structures, Interface, and Surfaces Pages: 1301 - 1303
Effect of anisotropy of band structure on optical gain in spherical quantum dots based on PbS and PbSe A. D. AndreevA. A. Lipovskii Low-Dimensional Systems Pages: 1304 - 1308
Superradiance in semiconductors S. V. ZaitsevL. A. GrahamP. S. Kop’ev Low-Dimensional Systems Pages: 1309 - 1314
Effect of γ irradiation on the photoluminescence kinetics of porous silicon V. F. AgekyanYu. A. StepanovA. D. Remenyuk Amorphous, Glassy, and Porous Semiconductors Pages: 1315 - 1317
Photodetectors based on osmium-doped silicon M. S. YunusovR. A. MuminovA. Kholboev Physics of Semiconductor Devices Pages: 1318 - 1319
Effect of liquid dielectrics on the efficiency of silicon solar cells Yu. A. AbramyanG. G. KaramyanV. I. Serago Physics of Semiconductor Devices Pages: 1320 - 1321
Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 µm A. P. DanilovaA. N. ImenkovS. Civis Physics of Semiconductor Devices Pages: 1322 - 1327
Nonpolarizing radiation detectors based on wide-gap semiconductor crystals P. G. KasherininovA. N. LodyginV. S. Khrunov Physics of Semiconductor Devices Pages: 1328 - 1330