1. Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium

   • D. A. Pavlov
   • N. V. Bidus
   • D. S. Sorokin

   XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 1 - 3

2. Optical lattices of excitons in InGaN/GaN quantum well systems

   • V. V. Chaldyshev
   • A. S. Bolshakov
   • M. A. Yagovkina

   XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 4 - 8

3. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

   • N. V. Dikareva
   • O. V. Vikhrova
   • D. A. Pavlov

   XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 9 - 12

4. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures

   • R. Kh. Zhukavin
   • K. A. Kovalevsky
   • V. N. Shastin

   XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 13 - 18

5. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

   • Yu. N. Drozdov
   • M. N. Drozdov
   • A. V. Novikov

   XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 19 - 22

6. Excitation of plasmonic terahertz photovoltaic effects in a periodic two-dimensional electron system by the attenuated total reflection method

   • D. V. Fateev
   • K. V. Mashinsky
   • V. V. Popov

   XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 23 - 27

7. Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping

   • D. A. Firsov
   • L. E. Vorobjev
   • A. P. Vasil’ev

   XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 28 - 32

8. Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots

   • V. A. Gaisler
   • A. V. Gaisler
   • A. L. Aseev

   XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 33 - 38

9. Energy spectrum and transport in narrow HgTe quantum wells

   • A. V. Germanenko
   • G. M. Minkov
   • N. N. Mikhailov

   XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 39 - 43

10. Dipolar excitons indirect in real and momentum space in a GaAs/AlAs heterostructure

    • A. V. Gorbunov
    • V. B. Timofeev

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 44 - 49

11. Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers

    • S. V. Khazanova
    • V. E. Degtyarev
    • N. V. Baidus

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 50 - 54

12. Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells

    • S. V. Khazanova
    • V. E. Degtyarev
    • N. V. Baidus

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 55 - 59

13. Simulated growth of GaAs nanowires: Catalytic and self-catalyzed growth

    • M. V. Knyazeva
    • A. G. Nastovjak
    • N. L. Shwartz

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 60 - 68

14. Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation

    • A. S. Puzanov
    • S. V. Obolenskii
    • V. A. Kozlov

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 69 - 74

15. Extension of the radiative lifetime of Wannier-Mott excitons in semiconductor nanoclusters

    • V. A. Kukushkin

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 75 - 80

16. Spin coherence of the two-dimensional electron gas in a GaAs quantum well

    • A. V. Larionov

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 81 - 87

17. Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning

    • N. A. Maleev
    • S. A. Blokhin
    • V. M. Ustinov

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 88 - 91

18. Specific features of NH₃ and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

    • A. N. Alexeev
    • D. M. Krasovitsky
    • V. G. Sidorov

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 92 - 94

19. Epitaxial growth of hexagonal silicon polytypes on sapphire

    • D. A. Pavlov
    • A. V. Pirogov
    • A. I. Bobrov

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 95 - 98

20. Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn

    • S. M. Plankina
    • O. V. Vikhrova
    • P. A. Yunin

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 99 - 103

21. Ultra-broadband near-field antenna for terahertz plasmonic applications

    • O. V. Polischuk
    • V. V. Popov
    • W. Knap

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 104 - 108

22. Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition

    • B. N. Zvonkov
    • O. V. Vikhrova
    • P. A. Yunin

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 109 - 112

23. Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling

    • V. Ya. Aleshkin
    • S. V. Morozov
    • I. V. Tuzov

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 113 - 117

24. Structural, optical, and current investigations of superlattices with a complex AlGaAs-based unit cell

    • Yu. Yu. Romanova
    • E. P. Dodin
    • N. V. Malekhonova

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 118 - 123

25. Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

    • Yu. G. Sadofyev
    • V. P. Martovitsky
    • I. S. Vasil’evskii

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 124 - 129

26. Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy

    • P. E. Teterin
    • D. V. Averyanov
    • V. G. Storchak

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 130 - 133

27. Characteristics of fullerene-based diode structures on polymer and glass substrates

    • V. V. Travkin
    • G. L. Pakhomov
    • A. A. Logunov

    XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 08 January 2015 Pages: 134 - 137