1. Evaluation of multibit upsets in integrated circuits under heavy charged particles

   • A. I. Chumakov

   OriginalPaper 26 March 2014 Pages: 91 - 95

2. Effect of topological placement of memory cells in memory chips on multiplicity of cell upsets from heavy charged particles

   • A. B. Boruzdina
   • N. G. Grigor’ev
   • A. V. Ulanova

   OriginalPaper 26 March 2014 Pages: 96 - 101

3. Limitations and prospects of using the two-phase CMOS logics in upset-immune sub-100-nm VLSIs

   • V. Ya. Stenin

   OriginalPaper 26 March 2014 Pages: 102 - 111

4. Modeling the characteristics of trigger elements of two-phase CMOS logic, taking into account the charge sharing effect under exposure to single nuclear particles

   • Yu. V. Katunin
   • V. Ya. Stenin
   • P. V. Stepanov

   OriginalPaper 26 March 2014 Pages: 112 - 124

5. Laser imitation simulation behind the diffraction limit

   • P. K. Skorobogatov

   OriginalPaper 26 March 2014 Pages: 125 - 132

6. Selection of optimal parameters of laser radiation for simulating ionization effects in silicon bulk-technology microcircuits

   • A. Yu. Nikiforov
   • P. K. Skorobogatov
   • D. V. Gromov

   OriginalPaper 26 March 2014 Pages: 133 - 138

7. Transient radiation effects in microwave monolithic integrated circuits based on heterostructure field-effect transistors: Experiment and model

   • V. V. Elesin

   OriginalPaper 26 March 2014 Pages: 139 - 147

8. Application of probabilistic and fuzzy models to the simulation of radiation failures of LSI circuits

   • V. M. Barbashov
   • N. S. Trushkin
   • K. A. Epifantsev

   OriginalPaper 26 March 2014 Pages: 148 - 161

9. The hydrogenic-electron model of accumulation of surface states on the oxide-semiconductor interface under the effects of ionizing radiation

   • A. V. Sogoyan
   • S. V. Cherepko
   • V. S. Pershenkov

   OriginalPaper 26 March 2014 Pages: 162 - 164