Abstract
The results obtained in research tests of kinetics of a radiation-induced formation of surface states in a MOS structure in an atmosphere of molecular hydrogen in various field modes are represented. It is found that an important element of the process of accumulation of radiation-induced surface states is the interaction between hydric complexes and electrons of the substrate. The obtained data allow considering hydrogenic and conversion concepts from the perspective of an integral hydrogenic-electron model for the incorporation of surface states. Under the proposed approach, both the existence of positive hydric complexes in the proximity of oxide-silicon interface and the interaction between these complexes and electrons from a substrate are necessary for the formation of the surface states. Both components would be a factor constraining the rate of formation of the surface states, depending on particular conditions.
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Original Russian Text © A.V. Sogoyan, S.V. Cherepko, V.S. Pershenkov, 2014, published in Mikroelektronika, 2014, Vol. 43, No. 2, pp. 156–158.
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Sogoyan, A.V., Cherepko, S.V. & Pershenkov, V.S. The hydrogenic-electron model of accumulation of surface states on the oxide-semiconductor interface under the effects of ionizing radiation. Russ Microelectron 43, 162–164 (2014). https://doi.org/10.1134/S1063739714020103
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DOI: https://doi.org/10.1134/S1063739714020103