Interrelation of equivalent values for linear energy transfer of heavy charged particles and the energy of focused laser radiation A. I. Chumakov Resistance of Microelectronic Devices to the Effect of Separate Nuclear Particles 22 May 2011 Pages: 149 - 155
CMOS logic elements with increased failure resistance to single-event upsets S. I. Ol’chevV. Ya. Stenin Resistance of Microelectronic Devices to the Effect of Separate Nuclear Particles 22 May 2011 Pages: 156 - 169
Memory-cell layout as a factor in the single-event-upset susceptibility of submicron dice CMOS SRAM V. Ya. SteninI. G. Cherkasov Resistance of Microelectronic Devices to the Effect of Separate Nuclear Particles 22 May 2011 Pages: 170 - 175
Modeling of recombination in SiO2 under the effect of ionizing radiation by the Monte Carlo method V. A. PoluninA. V. Sogoyan Influence of Dose Factors on the Resistance of Microelectronic Devices 22 May 2011 Pages: 176 - 184
Evaluation of resistance of CMOS LSIC to the factor of absorbed dose under the pulsed radiation effect A. V. Sogoyan Influence of Dose Factors on the Resistance of Microelectronic Devices 22 May 2011 Pages: 185 - 193
Features of charge formation and relaxation in SOS structures under the effect of ionizing radiation A. V. SogoyanG. G. Davydov Influence of Dose Factors on the Resistance of Microelectronic Devices 22 May 2011 Pages: 194 - 208
Influence of implantation of silicon and oxygen ions into a heteroepitaxial silicon layer on a sapphire substrate on the leakage currents of n-channel transistors of CMOS IC SOS technology A. A. ChistilinA. A. RomanovA. V. Ulanova Influence of Dose Factors on the Resistance of Microelectronic Devices 22 May 2011 Pages: 209 - 214
Electrothermal behavior of the elements of SOS CMOS chips O. A. GerasimchukK. A. EpifantsevP. K. Skorobogatov Electrothermal Processes in Microelectronic Devices 22 May 2011 Pages: 215 - 224
