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Modeling of recombination in SiO2 under the effect of ionizing radiation by the Monte Carlo method

  • Influence of Dose Factors on the Resistance of Microelectronic Devices
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Abstract

A method to calculate the yield of the primary recombination of electrons and holes in SiO2 is suggested. The boundedness of the approach for the description of the transfer and recombination in SiO2 based on the solution of the Smoluchowski equation and capture model not taking into account the structure of deep levels of the center is shown. The experimental and theoretical values of the recombination yield agree in a wide range of values of the field strength.

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Authors and Affiliations

  1. National Research Nuclear University MEPhI, Kashirskoe sh. 31, Moscow, 125080, Russia

    V. A. Polunin & A. V. Sogoyan

  2. OAO ENPO Specialized Electronic Systems, Kashirskoe sh. 31, Moscow, 115409, Russia

    V. A. Polunin & A. V. Sogoyan

Authors
  1. V. A. Polunin
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  2. A. V. Sogoyan
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Correspondence to A. V. Sogoyan.

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Original Russian Text © V.A. Polunin, A.V. Sogoyan, 2011, published in Mikroelektronika, 2011, vol. 40, No. 3, pp. 191–199

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Polunin, V.A., Sogoyan, A.V. Modeling of recombination in SiO2 under the effect of ionizing radiation by the Monte Carlo method. Russ Microelectron 40, 176–184 (2011). https://doi.org/10.1134/S1063739711030061

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