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Electrothermal behavior of the elements of SOS CMOS chips

  • Electrothermal Processes in Microelectronic Devices
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Abstract

Using two-dimensional (2D) numerical electrothermal simulation, the character of heating of SOS CMOS chip elements under the action of single voltage pulses was determined. The experiments carried out on SOS CMOS chips confirmed the validity of the developed numerical model of thin structure heating under the action of single voltage pulses. It was confirmed that the dependence of the pulse electric strength level on a single voltage pulses (SVP) length for SOS CMOS chips is weaker than that for CMOS chips fabricated using bulk or epitaxial technologies.

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Authors and Affiliations

  1. National Research Nuclear University MEPhI, Moscow, Russia

    O. A. Gerasimchuk, K. A. Epifantsev, T. V. Pavlova & P. K. Skorobogatov

  2. OAO ENPO Specialized Electronic Systems, Moscow, Russia

    K. A. Epifantsev & P. K. Skorobogatov

Authors
  1. O. A. Gerasimchuk
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  2. K. A. Epifantsev
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  3. T. V. Pavlova
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  4. P. K. Skorobogatov
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Corresponding author

Correspondence to P. K. Skorobogatov.

Additional information

Original Russian Text © O.A. Gerasimchuk, K.A. Epifantsev, T.V. Pavlova, P.K. Skorobogatov, 2011, published in Mikroelektronika, 2011, Vol. 40, No. 3, pp. 230–240

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Gerasimchuk, O.A., Epifantsev, K.A., Pavlova, T.V. et al. Electrothermal behavior of the elements of SOS CMOS chips. Russ Microelectron 40, 215–224 (2011). https://doi.org/10.1134/S1063739711030048

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  • DOI: https://doi.org/10.1134/S1063739711030048

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