In memory of Matvei I. Elinson (1918-2000) Y. V. GulyaevK. A. ValievL. G. Ponomareva Announcement Pages: 215 - 216
The Feasibility of creating a high-speed semiconductor—semimetal—semiconductor transistor V. N. LutskiiT. N. PinskerM. I. Elinson OriginalPaper Pages: 217 - 218
Principles of flicker noise spectroscopy and its application to disordered semiconductors: IonImplanted silicon M. I. Makoviichuk OriginalPaper Pages: 219 - 234
Reactive ion etching of copper in an RF N2 + BCl3 + Cl2 Plasma V. G. Mal’shakovA. E. BerdnikovV. N. Gusev OriginalPaper Pages: 235 - 240
Thermal oxidation of indium phosphide in the presence of lead, zirconium, and titanium oxides I. Ya. MittovaA. V. ShukarevG. G. Bubnova OriginalPaper Pages: 241 - 245
Deep traps in heteroepitaxial SOS layers subjected to various treatments A. S. AdoninA. V. BespalovM. V. Shiryaeva OriginalPaper Pages: 246 - 260
Simulation of epitaxial growth under ion-beam sputtering O. S. TrushinV. F. BochkarevV. V. Naumov OriginalPaper Pages: 261 - 272
Synthesis of multifunction logic modules built on hierarchic neural networks V. N. Lopin OriginalPaper Pages: 273 - 278
Modeling of the gate junction in GaAs MESFETs N. G. TarnovskiiV. S. OsadchukA. V. Osadchuk OriginalPaper Pages: 279 - 283