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The Feasibility of creating a high-speed semiconductor—semimetal—semiconductor transistor

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Abstract

The feasibility of creating a semiconductor-semimetal-semiconductor transistor with fast electron transit through its base is considered.

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References

  1. Atalla, M.M. and Soshea, R.W., Hot-Carrier Triodes with Thin-Film Metal Base,Solid-State Electron., 1963, vol. 6, no. 3, p. 245.

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  2. Interference and Dimensional Quantum Effects in Two-Dimensional Electronic Systems,Report of the Inst. Radio Eng. Electron., Moscow, 1986, no. 191-3-86.

  3. Pinsker, T.N., Hot Electron Transport through a Metal Film in Semiconductor-Metal-Semiconductor Systems),Fiz. Tekh. Poluprovodn. (Leningrad), 1967, vol. 1, no. 5, p. 702.

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11, 103907, Moscow, Russia

    V. N. Lutskii, T. N. Pinsker & M. I. Elinson

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  1. V. N. Lutskii
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  2. T. N. Pinsker
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  3. M. I. Elinson
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Deceased.

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Lutskii, V.N., Pinsker, T.N. & Elinson, M.I. The Feasibility of creating a high-speed semiconductor—semimetal—semiconductor transistor. Russ Microelectron 29, 217–218 (2000). https://doi.org/10.1007/BF02773269

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  • DOI: https://doi.org/10.1007/BF02773269

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