Abstract
Reactive ion etching (RIE) of copper in a cold-wall reactor is described. When the rf discharge power is sufficiently high, the etch surface temperature becomes sufficient for reaction product removal due to plasma-wafer heat exchange. The etching process can easily be controlled by monitoring the line intensity in the CuCl emission spectrum. For example, the 435.8-nm line allows operators to fix the instant of etch completion and to keep track of the process
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Mal’shakov, V.G., Berdnikov, A.E., Popov, A.A. et al. Reactive ion etching of copper in an RF N2 + BCl3 + Cl2 Plasma. Russ Microelectron 29, 235–240 (2000). https://doi.org/10.1007/BF02773271
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DOI: https://doi.org/10.1007/BF02773271