Volume 11, Issue 3

Search all Journal of Computational Electronics articles

September 2012

Special Issue on Advanced Numerical Tools for Transistors Based on Silicon and Emerging Materials

Issue Editor:

Massimo Macucci

10 articles in this issue

Introduction
Massimo Macucci
EditorialNotes 22 September 2012 Pages: 217 - 217
A multi scale modeling approach to non-radiative multi phonon transitions at oxide defects in MOS structures
F. Schanovsky
O. Baumgartner
T. Grasser
OriginalPaper 30 May 2012 Pages: 218 - 224
Comparing defect characterization techniques with non-radiative multiphonon charge trapping model
Davide Garetto
Yoann Mamy Randriamihaja
Hervé Jaouen
OriginalPaper 26 July 2012 Pages: 225 - 237
Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors
D. Vasileska
K. Raleva
S. M. Goodnick
OriginalPaper 18 May 2012 Pages: 238 - 248
Emission and absorption of optical phonons in Multigate Silicon Nanowire MOSFETs
Nima Dehdashti Akhavan
Isabelle Ferain
Jean-Pierre Colinge
OriginalPaper 18 July 2012 Pages: 249 - 265
FET based nano-pore sensing: a 3D simulation study
I. Moore
C. Millar
A. Asenov
OriginalPaper 26 May 2012 Pages: 266 - 271
Doping of SiGe core-shell nanowires
Michele Amato
Riccardo Rurali
Stefano Ossicini
OriginalPaper 24 February 2012 Pages: 272 - 279
Bias-induced destruction of ferromagnetism and disorder effects in GaMnAs heterostructures
C. Ertler
W. Pötz
OriginalPaper 10 May 2012 Pages: 280 - 286
Electrical transport and noise in polyacene semiconductors
C. Pennetta
M. Tizzoni
L. Reggiani
OriginalPaper 30 May 2012 Pages: 287 - 292
Phonon bottleneck effects in rectangular graphene quantum dots
Jun Qian
Mitra Dutta
Michael A. Stroscio
OriginalPaper 31 March 2012 Pages: 293 - 301

Volume 11, Issue 3

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