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Ni Barrier Symmetry Effect on Electromigration Failure Mechanism of Cu/Sn–Ag Microbump

  • Original Article - Electronics, Magnetics and Photonics
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Abstract

Ni barrier symmetry effect on the electromigration (EM) failure mechanism of Cu/Sn–Ag microbump were systematically investigated by studying the intermetallic compound (IMC) growth characteristics at 150 °C with a current density of 1.5 × 105 A/cm2. In the symmetric Ni barrier structure, Cu diffusion to Sn–Ag solder was restricted by the Ni barrier at both interfaces and the Ni3Sn4 phase formed by the inter-diffusion between Ni and Sn atoms just after bonding, which was gradually transformed to (Ni,Cu)3Sn4 phase and later to (Cu,Ni)6Sn5 during current stressing with relatively slow resistance increase with time. By the way, in the asymmetric structure, extensive Cu6Sn5 phase grew by the inter-diffusion between Cu and Sn atoms due to there is no Ni barrier at the upper interface, which was rapidly transformed into only Cu6Sn5 and Cu3Sn IMCs during electron downward flow, with relatively fast resistance increase with time. Therefore, the symmetric Ni barrier structure is very effective in restricting extensive IMC reactions during EM of Cu-solder microbump structure.

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References

  1. You, H.Y., Hwang, Y.H., Pyun, J.W., Ryu, Y.G., Kim, H.S.: Chip package interaction in micro bump and TSV structure. In: Proceedings of the 2012 IEEE 62nd Electronic Components and Technology Conference, p. 315. San Diego, CA (2012)

  2. Kim, J.H., Yoo, W.S., Han, S.M.: Non-destructive micro-Raman analysis of Si near Cu through silicon via. Electron. Mater. Lett. 13, 120 (2017)

    Article  Google Scholar 

  3. Sharma, A., Jung, D.H., Roh, M.H., Jung, J.P.: Fabrication and shear strength analysis of Sn–3.5Ag/Cu-filled TSV for 3D microelectronic packaging. Electron. Mater. Lett. 12, 856 (2016)

    Article  Google Scholar 

  4. Jin, S.H., Lee, D.R., Lee, W.Y., Lee, S.Y., Lee, M.H.: Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution. Met. Mater. Int. 21, 775 (2015)

    Article  Google Scholar 

  5. Hsiao, Y.H., Lin, K.L., Lee, C.W., Shao, Y.H., Lai, Y.S.: Study of electromigration-induced failures on Cu pillar bumps joined to OSP and ENEPIG substrates. J. Electron. Mater. 41, 3368 (2012)

    Article  Google Scholar 

  6. Liu, C.Y., Chen, C., Liao, C.N., Tu, K.N.: Microstructure-electromigration correlation in a thin stripe of eutectic SnPb solder stressed between Cu electrodes. Appl. Phys. Lett. 75, 58 (1999)

    Article  Google Scholar 

  7. Liu, C.Y., Chen, C., Tu, K.N.: Electromigration in Sn–Pb solder strips as a function of alloy composition. J. Appl. Phys. 88, 5703 (2000)

    Article  Google Scholar 

  8. Huynh, Q.T., Liu, C.Y., Chen, C., Tu, K.N.: Electromigration in eutectic SnPb solder lines. J. Appl. Phys. 89, 4332 (2001)

    Article  Google Scholar 

  9. Choi, W.J., Yeh, C.C., Tu, K.N.: Mean-time-to-failure study of flip chip solder joints on Cu/Ni(V)/Al thin-film under-bump-metallization. J. Appl. Phys. 94, 5665 (2003)

    Article  Google Scholar 

  10. Tu, K.N., Yeh, C.C., Liu, C.Y., Chen, C.: Effect of current crowding on vacancy diffusion and void formation in electromigration. Appl. Phys. Lett. 76, 988 (2000)

    Article  Google Scholar 

  11. Lai, Y.S., Lee, C.W., Kao, C.L.: Effect of test conditions on electromigration reliability of Sn–Ag–Cu flip-chip solder interconnects. J. Electron. Packag. 129, 56 (2007)

    Article  Google Scholar 

  12. Chang, Y.W., Chen, C., Chang, T.C., Zhan, C.J., Juang, J.Y., Huang, A.T.: Fast phase transformation due to electromigration of 18 μm microbumps in three-dimensional integrated-circuit integration. J. Mater. Lett. 137, 136 (2014)

    Article  Google Scholar 

  13. Heo, M.H., Kang, N., Park, S., Kim, J.K., Hong, W.S.: Kinetics of intermetallic compounds growth induced by electromigration of Sn–0.7Cu solder. Korean J. Met. Mater. 54, 908 (2016)

    Article  Google Scholar 

  14. Xu, D.E., Chow, J., Mayer, M., Jung, J.P., Yoon, J.H.: Sn–Ag–Cu to Cu joint current aging test and evolution of resistance and microstructure. Electron. Mater. Lett. 11, 1078 (2015)

    Article  Google Scholar 

  15. Sharma, A., Xu, D.E., Chow, J., Mayer, M., Sohn, H.R., Jung, J.P.: Electromigration of composite Sn–Ag–Cu solder bumps. Electron. Mater. Lett. 11, 1072 (2015)

    Article  Google Scholar 

  16. Kim, S.H., Lee, B.R., Park, G.T., Kim, J.M., Yoo, S.H., Park, Y.B.: Effects of PCB surface finishes on the mechanical and electrical reliabilities of Sn–0.7Cu Pb-free solder bump. Korean J. Met. Mater. 53, 735 (2015)

    Article  Google Scholar 

  17. Kim, Y., Kwon, J., Yoo, D., Park, S., Lee, D., Lee, D.: Influence of nickel thickness and annealing time on the mechanical properties of intermetallic compounds formed between Cu–Sn solder and substrate. Korean J. Met. Mater. 55, 165 (2017)

    Google Scholar 

  18. Alam, M.O., Chan, Y.C.: Solid-state growth kinetics of Ni3Sn4 at the Sn–3.5Ag solder∕Ni interface. J. Appl. Phys. 98, 123527 (2005)

    Article  Google Scholar 

  19. Alam, M.O., Chan, Y.C., Tu, K.N.: Effect of 0.5 wt % Cu addition in Sn–3.5%Ag solder on the dissolution rate of Cu metallization. J. Appl. Phys. 94, 7904 (2003)

    Article  Google Scholar 

  20. Alam, M.O., Chan, Y.C., Tu, K.N.: Elimination of Au-embrittlement in solder joints on Au/Ni metallization. J. Mater. Res. 19, 1303 (2004)

    Article  Google Scholar 

  21. Bader, S., Gust, W., Hieber, H.: Rapid formation of intermetallic compounds interdiffusion in the Cu–Sn and Ni-Sn systems. Acta Metall. Mater. 43, 329 (1995)

    Google Scholar 

  22. Kim, P.G., Jang, J.W., Lee, T.Y., Tu, K.N.: Interfacial reaction and wetting behavior in eutectic SnPb solder on Ni/Ti thin films and Ni foils. J. Appl. Phys. 86, 6746 (1999)

    Article  Google Scholar 

  23. Kulojarvi, K., Vuorinen, V., Kivilahti, J.: Effect of dissolution and intermetallic formation on the reliability of FC joints. Microelectron. Int. 15, 20 (1998)

    Article  Google Scholar 

  24. Ghosh, G.: Coarsening kinetics of Ni3Sn4 scallops during interfacial reaction between liquid eutectic solders and Cu/Ni/Pd metallization. J. Appl. Phys. 88, 6887 (2000)

    Article  Google Scholar 

  25. Ghosh, G.: Kinetics of interfacial reaction between eutectic Sn–Pb solder and Cu/Ni/Pd metallizations. J. Electron. Mater. 28, 1238 (1999)

    Article  Google Scholar 

  26. Chae, S.H., Zhang, X., Lu, K.H., Chao, H.L., Ho, P.S., Ding, M., Su, P., Uehling, T., Ramanathan, L.N.: Electromigration statistics and damage evolution for Pb-free solder joints with Cu and Ni UBM in plastic flip-chip packages. J. Mater. Sci. Mater. Electron. 18, 247 (2007)

    Article  Google Scholar 

  27. Liang, S.W., Chang, Y.W., Chen, C.: Relieving hot-spot temperature and current crowding effects during electromigration in solder bumps by using Cu columns. J. Electron. Mater. 36(2), 1348–1354 (2007)

    Article  Google Scholar 

  28. Kuo, K.H., Lee, J., Chien, F.L., Lee, R., Mao, C., Lau, J.: Electromigration performance of Cu pillar bump for flip chip packaging with bump on trace by using thermal compression bonding. In: Proceedings of the 2014 IEEE 64th Electronic Components and Technology Conference, p. 56. Orlando, FL (2014)

  29. Yu, J.J., Yang, C.A., Lin, Y.F., Hsueh, C.H., Kao, C.R.: Optimal Ag addition for the elimination of voids in Ni/SnAg/Ni micro joints for 3D IC applications. J. Alloys Compd. 629, 16 (2015)

    Article  Google Scholar 

  30. Liu, Y., Chen, Y.T., Gu, S., Kim, D.W., Tu, K.N.: Fracture reliability concern of (Au, Ni)Sn4 phase in 3D integrated circuit microbumps using Ni/Au surface finishing. Scr. Mater. 119, 9 (2016)

    Article  Google Scholar 

  31. Hsu, H.H., Huang, Y.T., Huang, S.Y., Chang, T.C., Wu, A.T.: Evolution of the intermetallic compounds in Ni/Sn–2.5Ag/Ni microbumps for three-dimensional integrated circuits. J. Electron. Mater. 44, 3888 (2015)

    Article  Google Scholar 

  32. Hsiao, Y.H., Lin, K.L.: The formation and conversion of intermetallic compounds in the Cu pillar Sn–Ag micro-bump with ENEPIG Cu substrate under current stressing. J. Mater. Sci. Mater. Electron. 27, 2201 (2016)

    Article  Google Scholar 

  33. Chen, H.Y., Ku, M.F., Chen, C.: Effect of under-bump-metallization structure on electromigration of Sn–Ag solder joints. Adv. Mater. Res. 1, 83 (2012)

    Article  Google Scholar 

  34. Ceric, H., Pires Singulani, A., Orio, R.L. de Selberherr, S.: Impact of intermetallic compound on solder bump electromigration reliability. In: Proceedings of the 2013 International Conference Simulation of Semiconductor Processes and Devices (SISPAD), p. 73. Glasgow, UK (2013)

  35. Chu, M.H., Liang, S.W., Chen, C., Huang, A.T.: Electromigration failure mechanism in Sn–Cu solder alloys with OSP Cu surface finish. J. Electron. Mater. 41, 2502 (2012)

    Article  Google Scholar 

  36. Yoon, J.W., Chun, H.S., Koo, J.M., Lee, H.J., Jung, S.B.: Microstructural evolution of Sn-rich Au–Sn/Ni flip-chip solder joints under high temperature storage testing conditions. Scr. Mater. 56, 661 (2007)

    Article  Google Scholar 

  37. Islam, N., Kim, G., Kim, K.O.: Electromigration for advanced Cu interconnect and the challenges with reduced pitch bumps. In: Proceedings of the 2014 IEEE 64th Electronic Components and Technology Conference, pp. 50–55. Orlando, FL (2014)

Download references

Acknowledgements

This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1D1A3B03933937), and also by MOTIE (Ministry of Trade, Industry and Energy (10067804) and KSRC(Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. The authors would like to thank Dr. M.S. Suh and N.S. Kim from SK Hynix Semiconductor Inc. for valuable discussions and test sample preparations.

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Authors and Affiliations

  1. Amkor Technology Korea Inc, Gwangju, 61006, Republic of Korea

    Gyu-Tae Park

  2. STATS ChipPAC Korea Ltd, Incheon, 22379, Republic of Korea

    Byeong-Rok Lee

  3. School of Materials Science and Engineering, Andong National University, Andong-si, 36729, Republic of Korea

    Kirak Son & Young-Bae Park

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  1. Gyu-Tae Park
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  2. Byeong-Rok Lee
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Correspondence to Young-Bae Park.

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Park, GT., Lee, BR., Son, K. et al. Ni Barrier Symmetry Effect on Electromigration Failure Mechanism of Cu/Sn–Ag Microbump. Electron. Mater. Lett. 15, 149–158 (2019). https://doi.org/10.1007/s13391-018-00108-5

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