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Improvement of minority carrier life time in N-type monocrystalline Si by the Czochralski method

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Abstract

The installation amount of solar power plants increases every year. Multi-crystalline Si solar cells comprise a large share of the market of solar power plants. Multi-crystalline and single-crystalline Si solar cells are competing against one another in the market. Many single-crystalline companies are trying to develop and produce n-type solar cells with higher cell efficiency than that of p-type. In n-type wafers with high cell efficiency, wafer quality has become increasingly important. In order to make ingots with higher MCLT, the effects of both poly types related to metal impurities and pull speeds related to vacancy concentration on minority carrier life time were studied. In the final part of ingots, poly types related to the metal impurities are a dominant factor on MCLT. In the initial part of ingots, pull speeds related to vacancy concentration are a dominant factor on MCLT.

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Authors and Affiliations

  1. R&D Team, R&D Center, Woongjin Energy, Daejeon, 34012, Korea

    Sungsun Baik, Ilsun Pang, Jaemin Kim & Kwanghun Kim

  2. Department of Materials Science and Engineering, KAIST, Daejeon, 34141, Korea

    Kwanghun Kim

Authors
  1. Sungsun Baik
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  2. Ilsun Pang
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  3. Jaemin Kim
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  4. Kwanghun Kim
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Correspondence to Kwanghun Kim.

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Baik, S., Pang, I., Kim, J. et al. Improvement of minority carrier life time in N-type monocrystalline Si by the Czochralski method. Electron. Mater. Lett. 12, 426–430 (2016). https://doi.org/10.1007/s13391-016-4001-4

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  • DOI: https://doi.org/10.1007/s13391-016-4001-4

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