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Investigation of the Influence of Deep-Level Defects on the Conversion Efficiency of Sibased Solar Cells

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Abstract

The influence of deep level defects (DLs) on the conversion efficiency of multicrystalline Si-based standard solar cells (SCs) is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. Three types of SCs with conversion efficiency 10%, 16.8% and 20.4% were studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). The correlation between the total concentration of DLs and the values of the SCs conversion efficiency is found.

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Authors and Affiliations

  1. Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation

    Vladimir G. Litvinov, Nikolay V. Vishnyakov, Valery V. Gudzev, Nikolay B. Rybin, Dmitry S. Kusakin, Alexander V. Ermachikhin, Sergey M. Karabanov, Sergey P. Vikhrov & Evgeny V. Slivkin

  2. Helios-Resource Ltd., 1 Proletarskaya Str., Saransk, Mordovia, 430001, Russian Federation

    Andrey S. Karabanov

Authors
  1. Vladimir G. Litvinov
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  2. Nikolay V. Vishnyakov
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  3. Valery V. Gudzev
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  4. Nikolay B. Rybin
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  5. Dmitry S. Kusakin
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  6. Alexander V. Ermachikhin
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  7. Sergey M. Karabanov
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  8. Sergey P. Vikhrov
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  9. Andrey S. Karabanov
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  10. Evgeny V. Slivkin
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Litvinov, V.G., Vishnyakov, N.V., Gudzev, V.V. et al. Investigation of the Influence of Deep-Level Defects on the Conversion Efficiency of Sibased Solar Cells. MRS Advances 1, 911–916 (2016). https://doi.org/10.1557/adv.2016.42

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  • DOI: https://doi.org/10.1557/adv.2016.42

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