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Fabrication and characterization of porous silicon nanowires

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Abstract

We report the synthesis of porous silicon nanowires through the metalassisted chemical etching of porous silicon in a solution of hydrofluoric acid and hydrogen peroxide. The morphology of porous silicon nanowires was characterized by scanning electron microscopy and transmission electron microscopy. The etch rate of the porous silicon nanowires was faster than that of silicon nanowires, but slower than that of porous silicon. The porous silicon nanowires distributed uniformly on the entire porous silicon layer and the tips of the porous silicon nanowires congregated together. The single crystalline and sponge-like porous structure with the pore diameters of less than 5 nm was confirmed for the porous silicon nanowires.

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Authors and Affiliations

  1. Department of Chemistry, Chosun University, Gwangju, 501-759, Korea

    Daeyoon Jung & Honglae Sohn

  2. Institute of Defense Advanced Technology Research, Agency for Defense Development, Daejeon, 305-600, Korea

    Soo Gyeong Cho

  3. Department of Materials Science and Engineering, Dankook University, Cheonan, Chungnam, 330-714, Korea

    Taeho Moon

Authors
  1. Daeyoon Jung
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  2. Soo Gyeong Cho
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  3. Taeho Moon
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  4. Honglae Sohn
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Correspondence to Taeho Moon or Honglae Sohn.

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Jung, D., Cho, S.G., Moon, T. et al. Fabrication and characterization of porous silicon nanowires. Electron. Mater. Lett. 12, 17–23 (2016). https://doi.org/10.1007/s13391-015-5409-y

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  • DOI: https://doi.org/10.1007/s13391-015-5409-y

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