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Si NW network by Ag nanoparticle assisted etching and TiO2/Si NWs as photodetector

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Abstract

Glancing angle deposited silver (Ag) nanoparticles (NPs) were employed to fabricate the silicon (Si) nanowire (NW) network on p-type Si substrate. The Si NWs were characterized by X-ray diffraction, which shows the (311) oriented single crystalline nature. The FEG-SEM images show that the nanowire diameters are in the order of 60–180 nm. The photoluminescence emission at 525 nm was recognized from the Si NWs. The Ag-TiO2 contacts exhibit Schottky behavior and higher photoconduction was observed for TiO2-Si NW detector than that of TiO2 Thin film under illumination up to 2.5 V applied potential. A threefold enhanced photodetection for the Silicon nanowire device was observed compared to the TiO2 thin film device, under applied voltages of 0.4–1.5 V.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology Agartala, Agartala, India

    Kishan Bhowmik & Aniruddha Mondal

  2. Department of Physics, National Institute of Technology Durgapur, Durgapur, India

    Aniruddha Mondal

Authors
  1. Kishan Bhowmik
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  2. Aniruddha Mondal
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Correspondence to Kishan Bhowmik.

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Bhowmik, K., Mondal, A. Si NW network by Ag nanoparticle assisted etching and TiO2/Si NWs as photodetector. Electron. Mater. Lett. 11, 180–186 (2015). https://doi.org/10.1007/s13391-014-4243-y

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  • DOI: https://doi.org/10.1007/s13391-014-4243-y

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