Skip to main content
SpringerLink
Log in

A novel high-speed shear test for lead-free flip chip packages

  • Published:
Electronic Materials Letters Aims and scope Submit manuscript

Abstract

Despite the importance of lead-free solders in modern environmentally friendly packaging, few studies have been conducted on their mechanical reliability at the wafer level. In the present study, high-speed die shear tests were conducted to investigate the effects of strain rate on the shearing resistance and fracture mode of Sn-3wt%Ag-0.5wt%Cu solder joints on electroless Ni-P/immersion Au surface finish pads. The results indicated that the solder joints underwent ductile and mixed ductile-brittle fracture at low (<855 s−1) and high (>25,385 s−1) strain rates, respectively. Thus, the overall shear stress-strain curve can be divided into three areas according to Hollomon’s law, starting from low strain rates: area I, 100% ductile fracture of the solder itself; area II, mixed ductile-brittle fracture resulting in a ductile-brittle transition region; and area III, 100% brittle fracture at the interface between the intermetallic compound and the Ni-P layer.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Y. S. Lai, C. L. Yeh, and C. C. Wang, J. Elecron. Packag. 129, 108 (2007).

    Google Scholar 

  2. J. W. Kim and S. B. Jung, Met. Mater. Int. 16, 7 (2010).

    Article  CAS  Google Scholar 

  3. J. W. Kim, D. G. Kim, and S. B. Jung, Met. Mater. Int. 11, 121 (2005).

    Article  CAS  Google Scholar 

  4. JEDEC, JESD22-B117 (2000), http://www.jedec.org.

  5. Y. S. Lai, T. H. Wang, H. H. Tsai, and M H. R. Jen, Microelectron. Reliab. 47, 111 (2007).

    Article  Google Scholar 

  6. G. Tang, B. An, Y. Wu, and F. Wu, Int’l Conf. Electron. Packag. Tech. & High Density Packag. (ICEPT-HDP), (2009).

  7. M. Lei, S. Vijay, G. Yifan, and M. Andrew, Electronic Components and Technology Conference, (1999).

  8. M. Nishiura, A. Nakayama, S. Sakatani, Y. Kohara, K. Uenishi, and K. Kobayashi, Mater. Trans. 43, 1802 (2002).

    Article  CAS  Google Scholar 

  9. Y. D. Jeon, S. Nieland, A. Ostmann, H. Reichl, and K. W. Paik, Proc. 52th ECTC, San Jose, CA, 740 (2002).

  10. T. Morita, R. Kajiwara, K. Yamamoto, K. Sato, M. Date, T. Shoji, I. Ueno, and S. Okabe, Proc. 16 th JIEP Annual Meeting, Kanagawa, Japan, 107 (2002).

  11. T. Shoji, K. Yamamoto, R. Kajiwara, T. Morita, K. Sato, and M. Date, Proc. 16 th JIEP Annual Meeting, Kanagawa, Japan, 97 (2002).

  12. I. Shohji, T. Nakamura, F. Mori, and S. Fujiuchi, Mater. Trans. 43, 1797 (2002).

    Article  CAS  Google Scholar 

  13. K. N. Tu and K. Zeng, Mater. Sci. Eng., R. 34, 1 (2001).

    Article  Google Scholar 

  14. K. Zeng and K. N. Tu, Mater. Sci. Eng., R. 38, 55 (2002).

    Article  Google Scholar 

  15. K. Suganuma, T. Murata, H. Noguchi, and Y. Toyoda, J. Mater. Res. 15, 884 (2000).

    Article  CAS  Google Scholar 

  16. C. E. Ho, R. Y. Tsai, Y. L. Lin, and C. R. Kao, J. Electron. Mater. 31, 584 (2002).

    Article  CAS  Google Scholar 

  17. P. L. Liu, Z. Xu, and J. K. Shang, Metall. Mater. Trans. A 31A, 2857 (2000).

    Article  CAS  Google Scholar 

  18. L. Xu, J. H. L. Pang, and F. X. Che, Proc. 55 th Electronic Components & Technology Conference, Orlando, FL, 682 (2005).

  19. K. W. Paik, Y. D. Jeon, and M. G. Cho, Proc. 54 th Electronic Components & Technology Conference, Las Vegas, NV, 675 (2004).

  20. F. Song and S. W. R. Lee, Proc. 56 th Electronic Components & Technology Conference, 1196 (2006).

  21. C. Y. Lin, Y. R. Chen, G. S. Shen, D. S. Liu, C. Y. Kuo, and C. L. Hsu, ICEPT-HDP, Shanghai, China (2008).

  22. H. F. Zon and Z. F. Zhang, J. Mater. Res. 23, 1614 (2008).

    Article  Google Scholar 

  23. F. Lang, H. Tanaka, O. Munegata, T. Taguchi, and T. Narita, Mater. Charact. 54, 223 (2005).

    Article  CAS  Google Scholar 

  24. I. Shohji, T. Yoshida, T. Takahashi, and S. Hioki, Mater. Sci. Eng. A366, 50 (2004).

    CAS  Google Scholar 

  25. B. Y. Wu, H. W. Zhong, Y. C. Chan, and M. O. Alam, J. Mater. Res. 21 (2006).

  26. Y. L. Huang, K. L. Lin, and D. S. Liu, J. Mater. Res. 23 (2008).

  27. M. O. Alam, Y. C. Chan, and K. N. Tu, J. Appl. Phys. 94, 4108 (2003).

    Article  CAS  Google Scholar 

  28. P. C. Shih and K. L. Lin, J. Alloy Comp. 422, 153 (2006).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. ACI Division, Samsung Electro-Mechanics, Busan, 618-721, Korea

    Seok-Hwan Huh & Kang-Dong Kim

  2. Fusion Technology Lab., Hoseo University, Asan, 336-795, Korea

    Keun-Soo Kim

  3. Dept. of Industrial & Information Systems Engineering, Ajou University, Suwon, 443-749, Korea

    Joong-Soon Jang

Authors
  1. Seok-Hwan Huh
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Kang-Dong Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Keun-Soo Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Joong-Soon Jang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Kang-Dong Kim.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Huh, SH., Kim, KD., Kim, KS. et al. A novel high-speed shear test for lead-free flip chip packages. Electron. Mater. Lett. 8, 59–64 (2012). https://doi.org/10.1007/s13391-011-1055-1

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s13391-011-1055-1

Keywords

Search

Navigation