Abstract
In the proposed work, the thin films have been effectively synthesized by doping the post-transition metal with rare earth metal (In-Yb2O3) on a large scale using a low-cost jet nebulizer spray pyrolysis technique at different indium (In) doping concentration (0, 1.5, 2.5, 3.5, and 4.5 wt %) with optimized substrate temperature 550 °C. The structural, morphological and opto-electrical properties are investigated using various characterization techniques. Here, the high-quality single-phase cubic structure film was observed by X-ray diffraction (XRD) analysis. The field emission scanning electron microscope (FESEM) image reveals the change in morphology with indium (In) concentration in Yb2O3 thin films. The elemental composition study approves the presence of Yb, In and O. The transmittance, optical indirect energy gap of In-Yb2O3 films have been analyzed by UV–Vis spectra. DC electrical analysis records an improved conductivity and reduced average activation energy for higher doping content of In-Yb2O3 thin films. Notably, all the diodes shows positive photo conducting properties. Specifically, when the Al/In-Yb2O3/p-Si Schottky barrier diode fabricated with higher doping concentration such as 4.5 wt. % produces the minimum ideality factor (1.791), maximum barrier height (0.692 eV) and higher photosensitive diodes.
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References
Asubay S (2011) The electrical characteristics of Al/p-InP Schottky contacts. Microelectron Eng 88:109–112. https://doi.org/10.1016/j.mee.2010.09.00
Balaji M, Chandrasekaran J, Raja M (2016) Role of substrate temperatureon MoO3 thin films by the JNS pyrolysis techniquefor P-N junction diode application. Mater Sci Semicond Process 43:104–113. https://doi.org/10.1016/j.mssp.2015.12.009
Balaji M, Chandrasekaran J, Raja M, Marnadu R, Ramamurthy M, Shkir M (2020) Fabrication of ON/OFF switching response based on n-Ni-doped MoO3/ p-Si junction diodes using Ni-MoO3 thin films as n-type layer prepared by JNS pyrolysis technique. Appl Phys A 126:216. https://doi.org/10.1007/s00339-020-3392-0
Balasubramani V, Chandrasekaran J, Manikandan V, Marnadu R, Vivek P, Balraju P (2020) Influence of rare earth doping concentrations on the properties of spin-coated V2O5 thin films and Cu/Nd-V2O5/n-Si Schottky barrier diodes. Inorg Chem Commun 119:108072. https://doi.org/10.1016/j.inoche.2020.108072
Ben Farhat L, Amami M, Hlil EK, Ben Hassen R (2010) Preparation, X-ray analysis and magnetic investigation of nano structured Co: Yb2O3. Mater Res Bull 45:1964–1968. https://doi.org/10.1016/j.materresbull.2010.08.007
Bhuvaneswari S, Seetha M, Chandrasekaran J, Marnadu R (2020) High photoresponsive p-Si/n-In2O3 junction diodes with low ideality factor prepared using closely packed octahedral structured In2O3 thin films. J Inorg Organomet Polym Mater. https://doi.org/10.1007/s10904-020-01663-x
Buyukbas-Ulusan A, Taşçıoğlu İ, Tataroğlu A, Yakuphanoğlu F, Altındal S (2019) A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures. J Mater Sci: Mater Electron 30:12122–12129. https://doi.org/10.1007/s10854-019-01570-z
Caglar M, Ilican S, Caglar Y, Yakuphanoglu F (2009) Electrical conductivity and optical properties of ZnO nanostructured thin film. Appl Surf Sci 255:4491–4496. https://doi.org/10.1016/j.apsusc.2008.11.055
Casalino M, Sassi U, Goykhman I, Eiden A, Lidorikis E, Milana S, Ferrari AC (2017) Vertically illuminated, resonant cavity enhanced, graphene–silicon Schottky photodetectors. ACS Nano 11:10955–10963
Chen J, Lv J, Wang Q (2016) Electronic properties of Al/MoO3/p-InP enhanced Schottky barrier contacts. Thin Solid Films. https://doi.org/10.1016/j.tsf.2016.08.019
Desai SP (2018) Improved opto-electrical properties of spray deposited ytterbium doped cadmium oxide thin films. J Mater Sci: Mater Electron 29:14416–14426. https://doi.org/10.1007/s10854-018-9574-2
Di Bartolomeo A (2016) Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction. Phys Rep 606(8):1–58. https://doi.org/10.1016/j.physrep.2015.10.003
Di Bartolomeo A, Giubileo F, Luongo G, Iemmo L, Martucciello N, Niu G, Fraschke M, Skibitzki O, Schroeder T, Lupina G (2017) Tunable Schottky barrier and high responsivity in graphene/Sinanotip Optoelectronic device. Mater. https://doi.org/10.1088/2053-1583/4/1/015024
Di Bartolomeo A, Giubileo F, Grillo A, Luongo G, Iemmo L, Urban F, Lozzi L, Capista D, Nardone M, Passacantando M (2019) Bias tunable photocurrent in metal-insulator semiconductor heterostructures with photoresponse enhanced by carbon nanotubes. Nanomaterials 9(11):1598. https://doi.org/10.3390/nano9111598
Dogru Balbasi C, Terlemezoglu M, Gullu HH, Yildiz DE, Parlak M (2020) Electrical characterization of CdZnTe/Si diode structure. Appl Phys A 126:614. https://doi.org/10.1007/s00339-020-03772-3
Janardhanam V, Jyothi I, Kim Y, Lee SN, Yun HJ, Hong WK, Choi CJ (2020) 2020 Carrier conduction mechanisms of WSe2/p-type Ge epilayer heterojunction depending on the measurement temperature and applied bias. J Alloys Compd. https://doi.org/10.1016/j.jallcom.2020.155843
Jyothi V, Janardhanam JH, Kim HJ, Yun JC, Jeong H, Hong SN, Lee CJ (2016) Choi, Electrical and structural properties of Au/Yb Schottky contact on p-type GaN as a function of the annealing temperature. J Alloy Compds. https://doi.org/10.1016/j.jallcom.2016.07.292
Kahraman A, Karacali H, Yilmaz E (2020) Impact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristics. J Alloy Compd 825:154171. https://doi.org/10.1016/j.jallcom.2020.154171
Katsuno T, Watanabe Y, Fujiwara H, Konishi M, Naruoka H, Morimoto J, Morino T, Endo T (2011) Analysis of surface morphology at leakage current sources of 4H–SiC Schottky barrier diodes. Appl Phys Lett 98:222111. https://doi.org/10.1063/1.3597413
Khanfar HK, Qasrawi AF, Zakarneh YA, Gasanly NM (2017) Design and applications of Yb/Ga2Se3/C schottky barriers. IEEE Sensors J. https://doi.org/10.1109/JSEN.2017.2702710
Lapa HE, Kökce A, Aldemir DA et al (2020) Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes. Indian J Phys 94:1901–1908. https://doi.org/10.1007/s12648-019-01644-y
Lei L, Kuisheng Y, Xiyan Z, Ning Q, Hui L, Zhou Z (2012) Up-conversion luminescence properties of Yb3+ and Ho3+ co-doped Bi3.84W0.16O6.24 powder synthesized by hydrothermal method. J Rare Earths. https://doi.org/10.1016/S1002-0721(12)60185-9
Luongo G, Di Bartolomeo A, Giubileo F (2018) Carlos alvarado chavarin, and christian wenger, electronic properties of graphene/p-silicon schottky junction. J Phys D Appl Phys. https://doi.org/10.1088/1361-6463/aac562
Marikkannu S, Kashif M, Ayeshamariam A, Sethupathi N, Vidhya VS, Piraman S, Jayachandran M (2014) Studies on jet nebulizer pyrolysed indium oxide thin films. J Ovonic Res 10(4):115–125. https://doi.org/10.13140/2.1.5015.104
Marnadu R, Chandrasekaran J, Raja M, Balaji M, Balasubramani V (2018) Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes. J Mater Sci 29:2618–2627. https://doi.org/10.1007/s10854-017-8187-5
Marnadu R, Chandrasekaran J, Maruthamuthu S et al (2019) Ultra-high photoresponse with superiorly sensitive metal-insulator-semiconductor (MIS) structured diodes for UV photodetector application. Appl Surf Sci. https://doi.org/10.1016/j.apsusc.2019.02.214
Mohanraj K, Balasubramanian D, Chandrasekaran J (2018) Synthesis and characterization of ruthenium-doped CdO nanoparticle and its n-RuCdO/p-Si junction diode application. J Alloy Compd. https://doi.org/10.1016/j.jallcom.2018.11.264
Munikrishna Reddy Y, Lakshmi Narasappa T, Padman Suvarna R, Rajagopal Reddy V (2015) Analysis of electrical properties and carrier transport mechanisms of Ru/Ti/n-InP schottky diodes at room temperature. Int J New Tech Sci Eng 2(2):2349–2780
Muralidharan M, Sivakumar K, Sivaji K (2018) Structural, optical and magnetic properties of pure and Yb doped MnWO4 compounds. Mech Mater Sci Eng. https://doi.org/10.2412/mmse.96.6.507
Narmada A, Kathirvel P, Lakshmi M, Saravanakumar S, Marnadu R, Chandrasekaran J (2019) Jet nebuliser spray pyrolysed indium oxide and nickel doped indium oxide thin films for photodiode application. Optik. https://doi.org/10.1016/j.ijleo.2019.163701
Petroff P, Sheng TT, Sinha AK, Rozgonyi GA, Alexander FB (1973) Plasma processing for VLSI. J Appl Phys 44:2545
Prnová A, Bodišová K, Klement R, Migát M, Veteška P, Škrátek M, Bruneel E, Van Driessche I, Galusek D (2014) Preparation and characterization of Yb2O3–Al2O3 glasses by the Pechini sol–gel method combined with flame synthesis. Ceram Int 40:6179–6184. https://doi.org/10.1016/j.ceramint.2013.11.071
Puri N, Rohilla A, Chamoli SK, Mahapatro AK (2019) Effect of ytterbium oxide deposition on micro structural and electrical properties of thin tantalum foil. Mater Lett 253:67–70. https://doi.org/10.1016/j.matlet.2019.06.016
Qian L, Sun Y, Wu M, Xie D, Ding L, Shi G (2017) A solution-processed high performance phototransistor based on a perovskite composite with chemically modified graphenes. Adv Mater 29:1606175
Raj M, Joseph C, Subramanian M, Perumalsamy V, Elayappan V (2020) Superior photoresponse MIS Schottky barrier diodes with nanoporous: Sn-WO3 films for ultraviolet photodetector application. New J Chem. https://doi.org/10.1039/D0NJ00101E
Raja M, Chandrasekaran J, Balaji M, Kathirvel P, Marnadu R (2019) Influence of metal (M = Cd, In, and Sn) dopants on the properties of spin-coated WO3 thin films and fabrication of temperaturedependent heterojunction diodes. J Sol-Gel Sci Technol. https://doi.org/10.1007/s10971-019-05207-9
Rajagopal Reddy V, Dasaradha Rao L, Janardhanam V, Kang M-S, Choi C-J (2013) Electrical properties and interface states of rare-earth metal ytterbium schottky contacts to p-type InP. Mater Trans. https://doi.org/10.2320/matertrans.M2013281
Rajagopal Reddy V, Sri Silpa D, Janardhanam V (2015) Rapid thermal annealing effects on the electrical, structural and morphological properties of Yb/ p-type InP Schottky structure. Electron Matter Lett. https://doi.org/10.1007/s13391-014-1368-y
RajMohamed J, Amalraj L (2016) Effect of precursor concentration on physical properties of nebulized spray deposited In2S3 thin films. J Asian Ceramic Soc 4:357–366. https://doi.org/10.1016/j.jascer.2016.07.002
Riazimehr S, Kataria S, Bornemann R, Haringbolívar P, Ruiz FJG, Engström O, Lemme MC (2017) High photocurrent in gated graphene–silicon hybrid photodiodes. ACS Photonics 4:1506–1514
Sarath babu R, Narasimha murthy Y, Shkir M, AlFaify S (2020) In-depth analysis on Erbium co-doped CdO: Zn films deposited by nebulizer method for opto-electronic applications. J Mol Struct. https://doi.org/10.1016/j.molstruc.2020.128148
Scarel G, Svane A, Fanciulli M (2006) Scientific and technological issues related to rare earth oxides: an introduction. Top Appl Phys 106(2):1–14
Shkir M, Anis M, Shaikh SS, Hamdy MS, AlFaify S (2020) Impact of Se doping on optical and third order nonlinear optical properties of spray pyrolysis fabricated CdS thin films for optoelectronics. Appl Phys B 126:121. https://doi.org/10.1007/s00340-020-07472-x
Sonmezoglu S, Akın S (2012) High performance GaAs metal-insulator-semiconductor devices using TiO2 as insulator layer. Curr Appl Phys 12:1372–1377. https://doi.org/10.1016/j.cap.2012.03.030
Suresh R, Ponnuswamy V, Mariappan R, Senthilkumar N (2014) Influence of substrate temperature on the properties of CeO2 thin films by simple nebulizer spraypyrolysis technique. Ceram Int 40:437–445. https://doi.org/10.1016/j.ceramint.2013.06.020
Tataroglu A, Altındal S (2008) Study on the frequency dependence of electrical and dielectric characteristics of Au/SnO2/n-Si (MIS) structures. Microelectron Eng 85:1866–1871. https://doi.org/10.1016/j.mee.2008.05.025
Terasaki N, Yamamoto N, Hattori M, Tanigaki N, Hiraga T, Ito K, Nakazato K (2009) Photosensor based on an FET utilizing a biocomponent of photosystem I for use in imaging devices. Langmuir 25:11969–11974
Thangaraju D, Marnadu R, Santhana V, Durairajan A, Kathirvel P, Chandrasekaran J, Jayakumar S, Valentec MA, Greenidgee DC (2020) Solvent influenced synthesis of single-phase SnS2 nanosheets for solution-processed photodiode fabrication. Cryst Eng Comm 22:525–533. https://doi.org/10.1039/c9ce01417a
Uma M, Rajagopal Reddy V, Janardhanam V (2019) Chel-Jong Choi, Effect of rare-earth Pr6O11 insulating layer on the electrical properties of Au/n-GaN Schottky electrode and its chemical and structural characterization. J Mater Sci. https://doi.org/10.1007/s10854-019-02224-w
Vivek P, Chandrasekaran J, Marnadu R, Maruthamuthu S, Balasubramani V, Balraju P (2019a) Zirconia modified nanostructured MoO3 thin films deposited by spray pyrolysis technique for Cu/MoO3-ZrO2/p-Si structured Schottky barrier diode application. Optik 199:163351. https://doi.org/10.1016/j.ijleo.2019.163351
Vivek P, Chandrasekaran J, Marnadu R, Maruthamuthu S, Balasubramani V (2019b) Incorporation of Ba2+ ions on the properties of MoO3 thin films and fabrication of positive photo-response Cu/Ba–MoO3/p-Si structured diode. Superlattices Microstruct 133:106197. https://doi.org/10.1016/j.spmi.2019.106197
Vivek P, Chandrasekaran J, Marnadu R, Maruthamuthu S (2020) Fabrication of illumination-dependent Cu/p-Si schottky barrier diodes by sandwiching MoO3 nanoplates as an interfacial layer via JNSP technique. J Electron Mater. https://doi.org/10.1007/s11664-020-08137-3
Zargouni S, El Whibi S, Tessarolo E, Rigon M, Martucci A, Ezzaouia H (2020a) Structural properties and defect related luminescence of Yb-doped NiO sol-gel thin films. Superlattices Microstruct 138:106361. https://doi.org/10.1016/j.spmi.2019.106361
Zargouni S, El Whibi S, Tessarolo E, Rigon M, Martucci A, Ezzaouia H (2020b) Structural properties and defect related luminescence of Yb-doped NiO sol-gel thin films. Superlattices Microstruct. https://doi.org/10.1016/j.spmi.2019.106361
Acknowledgements
The authors would like to express their gratitude to Advance Research Instrumentation Centre (ARIC), Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore for providing instrument facilities. Also, the author Mohd Shkir from KKU would like to express his gratitude to Deanship of Scientific Research at King Khalid University, Abha, Saudi Arabia for funding this work through Research Groups Program under Grant No. R.G.P.2/60/42.
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K. S. Mohan contributed to writing of the original draft, validation, investigation and methodology. A. Panneerselvam contributed to writing, supervision, review and editing. J. Chandrasekaran contributed to review and editing. R. Marnadu contributed to validation, investigation, methodology, writing of the original draft, review and editing. Mohd. Shkir contributed to writing of the original draft, review and editing.
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Mohan, K.S., Panneerselvam, A., Chandrasekaran, J. et al. An in-depth examination of opto-electrical properties of In-Yb2O3 thin films and fabricated Al/In-Yb2O3/p-Si (MIS) hetero junction diodes. Appl Nanosci 11, 1617–1635 (2021). https://doi.org/10.1007/s13204-021-01817-4
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DOI: https://doi.org/10.1007/s13204-021-01817-4