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Modulation instability in lossy silicon optical waveguide

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Abstract

Taking into account the small linear loss of silicon-on-insulator(SOI) waveguide, conditions and gain spectra of modulation instability(MI) induced by combined effects of self-phase modulation and waveguide dispersions are investigated. The impacts of various parameters to gain spectra of MI are analyzed theoretically. Results show that strong MI takes place even in the existence of low light power. The MI peak gain is 2 to 3 orders of magnitude larger than that achieved in optical fibers with the same light power. The linear loss of waveguide impacts gain spectra of MI, even within ultra-short propagation distance. The peak gain, peak gain frequency and bandwidth of gain spectra decrease to 66.828%, 41.683% and 41.6879% of their maxima at propagation distance z = 5mm, respectively.

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Authors and Affiliations

  1. Wuhan National Laboratory for Optoelectronics, Institute of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Luoyu Road, Wuhan, 430074, PR China

    Weilin Zhou, Fengguang Luo, Zhihua Yu & Bin Li

  2. School of Computer and Electronics Engineering, Hunan Business College, Tongzipo Road, Changsha, 410205, PR China

    Weilin Zhou & Xinyu Zhao

Authors
  1. Weilin Zhou
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  2. Fengguang Luo
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  3. Zhihua Yu
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  4. Xinyu Zhao
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  5. Bin Li
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Correspondence to Fengguang Luo.

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Zhou, W., Luo, F., Yu, Z. et al. Modulation instability in lossy silicon optical waveguide. Indian J Phys 85, 607–614 (2011). https://doi.org/10.1007/s12648-011-0063-1

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  • DOI: https://doi.org/10.1007/s12648-011-0063-1

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