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Anisotropic electrical properties of aligned PtSe2 nanoribbon arrays grown by a pre-patterned selective selenization process

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Abstract

This study proposes a feasible and scalable production strategy to naturally obtain aligned platinum diselenide (PtSe2) nanoribbon arrays with anisotropic conductivity. The anisotropic properties of two-dimensional (2D) materials, especially transition-metal dichalcogenides (TMDs), have attracted great interest in research. The dependence of physical properties on their lattice orientations is of particular interest because of its potential in diverse applications, such as nanoelectronics and optoelectronics. One-dimensional (1D) nanostructures facilitate many feasible production strategies for shaping 2D materials into unidirectional 1D nanostructures, providing methods to investigate the anisotropic properties of 2D materials based on their lattice orientations and dimensionality. The natural alignment of zigzag (ZZ) PtSe2 nanoribbons is experimentally demonstrated using angle-resolved polarized Raman spectroscopy (ARPRS), and the selective growth mechanism is further theoretically revealed by comparing edges and edge energies of different orientations using the density functional theory (DFT). Back-gate field-effect transistors (FETs) are also constructed of unidirectional PtSe2 nanoribbons to investigate their anisotropic electrical properties, which align with the results of the projected density of states (DOS) calculations. This work provides new insight into the anisotropic properties of 2D materials and a feasible investigation strategy from experimental and theoretical perspectives.

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Acknowledgements

H. Wang and Z. Liu contributed equally to this work. The authors are grateful for the financial support from the National Natural Science Foundation of China (Nos. 52072204 and 62104017), the National Postdoctoral Program for Innovative Talents of China (No. BX20200049), and China Postdoctoral Science Foundation (No. 2021M690013). We also acknowledge the Tsinghua Xuetang Talents Program for providing the computational resources.

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  1. Huaipeng Wang and Zhifang Liu contributed equally to this work.

Authors and Affiliations

  1. School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China

    Huaipeng Wang, Dan Xie & Tianling Ren

  2. Department of Chemistry, Tsinghua University, Beijing, 100084, China

    Zhifang Liu & Xiaofan Ping

  3. School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China

    Yilin Sun & Yingtao Ding

  4. Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China

    Jianlong Xu

  5. State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China

    Haowen Hu

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  1. Huaipeng Wang
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Correspondence to Yilin Sun, Dan Xie or Tianling Ren.

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Anisotropic electrical properties of aligned PtSe2 nanoribbon arrays grown by a pre-patterned selective selenization process

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Wang, H., Liu, Z., Sun, Y. et al. Anisotropic electrical properties of aligned PtSe2 nanoribbon arrays grown by a pre-patterned selective selenization process. Nano Res. 15, 4668–4676 (2022). https://doi.org/10.1007/s12274-022-4110-3

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