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Highly uniform carbon nanotube nanomesh network transistors

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Abstract

A new type of single-walled carbon nanotube (SWNT) thin-film transistor (TFT) structure with a nanomesh network channel has been fabricated from a preseparated semiconducting nanotube solution and simultaneously achieved both high uniformity and a high on/off ratio for application in large-scale integrated circuits. The nanomesh structure is prepared on a high-density SWNT network channel and enables a high on/off ratio while maintaining the excellent uniformity of the electrical properties of the SWNT TFTs. These effects are attributed to the effective elimination of metallic paths across the source/drain electrodes by forming the nanomesh structure in the high-density SWNT network channel. Therefore, our approach can serve as a critical foundation for future nanotube-based thinfilm display electronics.

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Authors and Affiliations

  1. School of Electrical Engineering, Kookmin University, Seoul, 136-702, South Korea

    Sung-Jin Choi

  2. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA

    Patrick Bennett & Jeffrey Bokor

  3. Applied Science & Technology, University of California, Berkeley, CA, 94720, USA

    Patrick Bennett

  4. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, South Korea

    Dongil Lee

  5. Materials Sciences Division, Lawrence Berkeley National Laboratories, Lawrence, CA, 94720, USA

    Jeffrey Bokor

Authors
  1. Sung-Jin Choi
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  2. Patrick Bennett
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  3. Dongil Lee
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  4. Jeffrey Bokor
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Correspondence to Jeffrey Bokor.

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Choi, SJ., Bennett, P., Lee, D. et al. Highly uniform carbon nanotube nanomesh network transistors. Nano Res. 8, 1320–1326 (2015). https://doi.org/10.1007/s12274-014-0623-8

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  • DOI: https://doi.org/10.1007/s12274-014-0623-8

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