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Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

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Abstract

The electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS2) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive or tensile bi-axial strain on bi-layer and mono-layer MoS2, the electronic properties are predicted to change from semiconducting to metallic. These changes present very interesting possibilities for engineering the electronic properties of two-dimensional structures of MoS2.

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Author notes

  1. Geoffrey Pourtois

    Present address: Interuniversity Microelectronics Centre, Leuven, B-3001, Belgium

Authors and Affiliations

  1. Semiconductor Physics Laboratory, Department of Physics and Astronomy, University of Leuven, Leuven, B-3001, Belgium

    Emilio Scalise, Michel Houssa, Valery Afanas’ev & André Stesmans

  2. Department of Chemistry, University of Antwerp, Wilrijk-Antwerp, B-2610, Belgium

    Geoffrey Pourtois

Authors
  1. Emilio Scalise
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  2. Michel Houssa
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  3. Geoffrey Pourtois
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  4. Valery Afanas’ev
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  5. André Stesmans
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Correspondence to Emilio Scalise.

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Scalise, E., Houssa, M., Pourtois, G. et al. Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 . Nano Res. 5, 43–48 (2012). https://doi.org/10.1007/s12274-011-0183-0

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  • DOI: https://doi.org/10.1007/s12274-011-0183-0

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