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Modeling and simulation of InAs/GaAs quantum dot lasers

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Abstract

Based on the analysis of carrier dynamics in quantum dots (QDs), the numerical model of InAs/GaAs QD laser is developed by means of complete rate equations. The model includes four energy levels and among them three energy levels join in lasing. A simulation is conducted by MATLAB according to the rate equation model we obtain. The simulation results of PI characteristic, gain characteristic and intensity modulation response are reasonable. Also, the relations between the left facet reflectivity of laser cavity and threshold current as well as modulation bandwidth are studied. It is indicated that the left facet reflectivity increasing can result in reduced threshold current and improved modulation bandwidth, which is in accordance with experimental results. The internal mechanism of QD lasers is fully described with the rate equation model, which is helpful for QD lasers research.

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Authors and Affiliations

  1. School of Electronic Information Engineering, Henan University of Science and Technology, Luoyang, 471003, China

    Shao-feng Lv  (吕少锋), Shu-zhong Song  (宋书中) & Jian-wei Ma  (马建伟)

  2. Electronic Department, Politecnico di Torino, Turin, 10129, Italy

    Shao-feng Lv  (吕少锋), Ivo Montrosset & Mariangela Gioannini

Authors
  1. Shao-feng Lv  (吕少锋)
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  2. Ivo Montrosset
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  3. Mariangela Gioannini
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  4. Shu-zhong Song  (宋书中)
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  5. Jian-wei Ma  (马建伟)
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Correspondence to Shao-feng Lv  (吕少锋).

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Lv, Sf., Montrosset, I., Gioannini, M. et al. Modeling and simulation of InAs/GaAs quantum dot lasers. Optoelectron. Lett. 7, 122–125 (2011). https://doi.org/10.1007/s11801-011-0102-3

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  • DOI: https://doi.org/10.1007/s11801-011-0102-3

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