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Influence of temperature on Auger recombination lifetime in In1−x Ga x As materials

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Abstract

The influence of temperature and Ga composition on Auger recombination lifetime in n-type and p-type In1−x Ga x As materials is investigated through the simulation, assuming the concentrations of electrons and holes are 1017 cm−3 and 1018 cm−3, respectively. The results show that the temperature has little influence on Auger recombination lifetime of In1−x Ga x As materials at x<0.3. However, it has a great impact when x>0.3 and the effect is more obvious at a lower temperature. Moreover, Auger recombination lifetime of p-type In1−x Ga x As is longer than that of n-type In1−x Ga x As with the same temperature, Ga composition and carriers concentration.

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References

  1. CHEN Liang-hui, Infrared and Laser Engineering 37, 1 (2008). (in Chinese)

    Google Scholar 

  2. OZER S, CELLEK O O and BESIKCI C, Infrared Physics and Technology 47, 115 (2005).

    Article  ADS  Google Scholar 

  3. Latika B, Proc. of SPIE 5881, 588105 (2005).

    Article  Google Scholar 

  4. ZHANG Ke-feng, TANG Heng-jing, LI Tao, LI Yong-fu, NING Jin-hua, LI Xue and GONG Hai-mei, Journal of Optoelectronics · Laser 20, 713 (2009).(in Chinese)

    Google Scholar 

  5. WANG Qi, REN Xiao-min, XIONG De-ping, ZHOU Jing, LV Ji-he, HUANG Hui, HUANG Yong-qing and CAI Shi-wei, Journal of Optoelectronics·Laser 18, 1143 (2007). (in Chinese)

    Google Scholar 

  6. Henry Y, Jongwoo K, Gary A, Joyce L, Kai S, Joseph K.C and Ted W, Proc. of SPIE 6950, 695000 (2008).

    Google Scholar 

  7. A. Rogalski and Z. Orman, Infrared Phys. 25, 551 (1985).

    Article  ADS  Google Scholar 

  8. M. Takeshima, J. Appl. Phys. 43, 4114 (1972).

    Article  ADS  Google Scholar 

  9. B.L. Gelmont, Phys. Lett. A 66, 323 (1978).

    Article  ADS  Google Scholar 

  10. Y. Tian, T.M. Zhou, B.L. Zhang, H. Jiang and Y.X. Jin, Opt. Eng. 37, 1754 (1998).

    Article  ADS  Google Scholar 

  11. S. Paul, J.B. Roy and P.K. Basu, J. Appl. Phys. 69, 827829 (1991).

    Article  Google Scholar 

Download references

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Authors and Affiliations

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China

    Yu-chun Chang  (常玉春), Chang-xin Tian  (田长鑫), Yan Ma  (马艳), Jing-zhi Yin  (殷景志), Qiang Gao  (高强), Yi-ding Wang  (王一丁), Fu-bin Gao  (高福斌) & Guo-tong Du  (杜国同)

Authors
  1. Yu-chun Chang  (常玉春)
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  2. Chang-xin Tian  (田长鑫)
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  3. Yan Ma  (马艳)
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  4. Jing-zhi Yin  (殷景志)
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  5. Qiang Gao  (高强)
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  6. Yi-ding Wang  (王一丁)
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  7. Fu-bin Gao  (高福斌)
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  8. Guo-tong Du  (杜国同)
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Corresponding author

Correspondence to Jing-zhi Yin  (殷景志).

Additional information

This work has been supported by the National Natural Science Foundation of China (No.60676039), the National High Technology Research and Development Program of China (No.2007AA06Z112), Research Fund for the Doctoral Program of Higher Education of China (No. 20060183030), and the Science and Technology Department of Jilin Province (No.20070709).

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Chang, Yc., Tian, Cx., Ma, Y. et al. Influence of temperature on Auger recombination lifetime in In1−x Ga x As materials. Optoelectron. Lett. 6, 31–33 (2010). https://doi.org/10.1007/s11801-010-9188-2

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  • DOI: https://doi.org/10.1007/s11801-010-9188-2

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