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Post-Annealing Effects on Surface Morphological, Electrical and Optical Properties of Nanostructured Cr-Doped CdO Thin Films

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Abstract

Nanostructured Cr-doped CdO thin films were deposited on glass substrates by reactive direct current magnetron sputtering and post-annealed in vacuum from 200°C to 500°C. X-ray diffraction studies confirmed that the films exhibit cubic nature with preferential orientation along the (111) plane. The crystallite size, lattice parameters, unit cell volume and strain in the films were determined from x-ray diffraction analysis. The surface morphology of the films has been characterized by field emission scanning electron microscopy and atomic force microscopy. The electrical properties of the Cr-doped CdO thin films were measured by using a four-probe method and Hall effect system. The lowest electrical resistivity of 2.20 × 10−4 Ω cm and a maximum optical transmittance of 88% have been obtained for the thin films annealed at 500°C. The optical band gap of the films decreased from 2.77 eV to 2.65 eV with the increase of annealing temperature. The optical constants, packing density and porosity of Cr-doped CdO thin films were also evaluated from the transmittance spectra.

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Authors and Affiliations

  1. Department of Physics, Anil Neerukonda Institute of Technology and Sciences (Autonomous), Sangivalasa, Visakhapatnam, A.P., 531 162, India

    B. Hymavathi

  2. Department of Physics, GITAM Institute of Technology, GITAM University, Visakhapatnam, A.P., 530 045, India

    B. Rajesh Kumar

  3. Materials Research Lab, Department of Physics, Sri Krishnadevaraya University, Anantapur, A.P., 515 003, India

    T. Subba Rao

Authors
  1. B. Hymavathi
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  2. B. Rajesh Kumar
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  3. T. Subba Rao
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Correspondence to B. Hymavathi.

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Hymavathi, B., Rajesh Kumar, B. & Subba Rao, T. Post-Annealing Effects on Surface Morphological, Electrical and Optical Properties of Nanostructured Cr-Doped CdO Thin Films. J. Electron. Mater. 47, 503–511 (2018). https://doi.org/10.1007/s11664-017-5799-8

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  • DOI: https://doi.org/10.1007/s11664-017-5799-8

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