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Microstructural and Optoelectronic Properties Investigation of Sb Doped CdSe Thin Films

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Abstract

Thin films of Sb-doped CdSe have been deposited on glass substrates by a chemical method at room temperature. The X-ray diffraction pattern confirms the presence of a cubic phase with preferred orientation along the (111) plane. The elemental composition of the thin films has been examined utilizing energy dispersive X-ray analysis. Morphology of the thin films has been investigated using scanning electron microscopy. In the optical absorption study, a decrease in the band gap with increase in Sb doping in CdSe lattice has been observed. Photoluminescence spectra show a redshift in the emission peak with an increase in Sb doping in CdSe. Electrical resistivity measurements are additionally carried out utilizing a two-probe DC method, and two types of conduction mechanisms are observed. Raman analysis shows the formation of CdSe thin films with a nanocrystalline phase. Contact angle measurement establishes the hydrophilic behavior of Sb-doped CdSe thin films with water.

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Acknowledgments

The authors are thankful to the management of Bhilai Institute of Technology, Durg, India, for providing financial and lab support. The authors are additionally thankful to Dr. Mukul Gupta and Dr. V. Sathe of UGC-DAE, IUC-CSR, Indore, India, for providing XRD and Raman studies. The authors are grateful to NIT Raipur, India, for providing SEM and EDX studies.

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Correspondence to Prashant K. Sahu.

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Sahu, P.K., Das, R. Microstructural and Optoelectronic Properties Investigation of Sb Doped CdSe Thin Films. J. Electron. Mater. 51, 552–563 (2022). https://doi.org/10.1007/s11664-021-09317-5

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