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Dopant in Near-Surface Semiconductor Layers of Metal–Insulator–Semiconductor Structures Based on Graded-Gap p-Hg0.78Cd0.22Te Grown by Molecular-Beam Epitaxy

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Abstract

Peculiarities in determining the dopant concentration and dopant distribution profile in the near-surface layer of a semiconductor are investigated by measuring the admittance of metal–insulator–semiconductor structures (MIS structures) based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy. The dopant concentrations in the near-surface layer of the semiconductor are determined by measuring the admittance of MIS structures in the frequency range of 50 kHz to 1 MHz. It is shown that in this frequency range, the capacitance–voltage characteristics of MIS structures based on p-Hg0.78Cd0.22Te with a near-surface graded gap layer demonstrate a high-frequency behavior with respect to the recharge time of surface states located near the Fermi level for an intrinsic semiconductor. The formation time of the inversion layer is decreased by less than two times, if a near-surface graded-gap layer is created. The dopant distribution profile in the near-surface layer of the semiconductor is found, and it is shown that for structures based on p-Hg0.78Cd0.22Te with a near-surface graded-gap layer, the dopant concentration has a minimum near the interface with the insulator. For MIS structure based on n-Hg0.78Cd0.22Te, the dopant concentration is more uniformly distributed in the near-surface layer of the semiconductor.

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Acknowledgement

This work was supported in part by the Grant (No. 8.2.10.2015) within the “The Tomsk State University Academic D.I. Mendeleev Fund Program”. This work was financially supported by the State Task No. 16.1032.2014/K. The authors are grateful to the staff of ISP SB RAS Varavin V.S., Vasil’ev V.V., Dvoretsky S.A., Mikhailov N.N., Yakushev M.V., Sidorov G.Y., and Parm I.O. for providing the MBE HgCdTe samples.

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Authors and Affiliations

  1. National Research Tomsk State University, 36 Lenina Ave., 634050, Tomsk, Russia

    A. V. Voitsekhovskii, S. N. Nesmelov & S. M. Dzyadukh

  2. Siberian Physical-Technical Institute TSU, 1 Novosobornaya Sq., 634050, Tomsk, Russia

    A. V. Voitsekhovskii, S. N. Nesmelov & S. M. Dzyadukh

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  1. A. V. Voitsekhovskii
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  2. S. N. Nesmelov
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  3. S. M. Dzyadukh
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Correspondence to S. N. Nesmelov.

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Voitsekhovskii, A.V., Nesmelov, S.N. & Dzyadukh, S.M. Dopant in Near-Surface Semiconductor Layers of Metal–Insulator–Semiconductor Structures Based on Graded-Gap p-Hg0.78Cd0.22Te Grown by Molecular-Beam Epitaxy. J. Electron. Mater. 45, 881–891 (2016). https://doi.org/10.1007/s11664-015-4239-x

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  • DOI: https://doi.org/10.1007/s11664-015-4239-x

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