Total conductance of MIS structures based on graded-gap p-Hg1–хCdхTe (x =0.22–0.23) grown by molecular beam epitaxy (MBE) is studied in a wide temperature range 8-300 K. It is found that for MIS structures based on graded-gap MBE p-Hg1–хCdхTe (x =0.23) doped with As to a concentration of 1017 сm–3, the differential resistance of space charge region in the temperature range 8–100 K is limited by the processes of tunnel generation of minority carriers. It is shown that for MIS structures based on graded-gap MBE p-Hg1–хCdхTe (x =0.22) with the hole concentration of (8–9)·1015 сm–3, the differential resistance of space charge region in the temperature range 30–90 K is limited by the processes of Shockley-Read generation, regardless of the presence of a graded-gap layer. At higher temperatures, the differential resistance of space-charge region is limited by processes of the minority carrier diffusion from the quasi-neutral bulk region.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 3–11, June, 2014.
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Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.М. et al. Total Conductance of MIS Structures Based on Graded-Gap p-Hg1–х Cd х Te (x =0.22–0.23) Grown by Molecular Beam Epitaxy. Russ Phys J 57, 707–716 (2014). https://doi.org/10.1007/s11182-014-0294-7
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DOI: https://doi.org/10.1007/s11182-014-0294-7