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Interfacial Reactions in Sn-Ag/Co Couples

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Abstract

Sn-Ag alloys are important solders, and Co and Co alloys are investigated as barrier layers. Interfacial reactions in Sn-Ag/Co couples were examined in this study for Ag contents of 1.0 wt.%, 2.0 wt.%, and 3.5 wt.% and reaction temperatures of 250°C, 200°C, and 150°C. Only CoSn3 formed in Sn-Ag/Co couples reacted at 250°C, but both CoSn3 and Ag3Sn formed in couples reacted at 200°C and 150°C. The reaction layer was 100 μm thick in Sn-3.5 wt.%Ag/Co couples reacted at 200°C for 110 h. The reaction rates were lower if Ag was added, but remained very fast compared with those for Ni and Ni-based substrates.

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References

  1. R.J. Klein Wassink, Soldering in Electronics, 2nd ed. (Isle of Man: Electrochemical Publications, 1989).

    Google Scholar 

  2. S.K. Kang and A.K. Sarkhel, J. Electron. Mater. 23, 701–707 (1994).

    Article  Google Scholar 

  3. S.W. Chen, C.H. Wang, S.K. Lin, and C.N. Chiu, J. Mater. Sci. Mater. Electron. 18, 19–37 (2007).

    Article  Google Scholar 

  4. C. Chen, H.M. Tong, and K.N. Tu, Annu. Rev. Mater. Res. 40, 531–555 (2010).

    Article  Google Scholar 

  5. C.M. Chen and S.W. Chen, J. Appl. Phys. 90, 1208–1214 (2001).

    Article  Google Scholar 

  6. J.H. Lau, Microelectron. Int. 28, 8–22 (2011).

    Article  Google Scholar 

  7. Council Directive, Off. J. Eur. Union L37, 19–23 (2003).

  8. M.N. Chen, S.J. Ding, Q.Q. Sun, D.W. Zhang, and L.K. Wang, J. Electron. Mater. 37, 894–900 (2008).

    Article  Google Scholar 

  9. S. Kumamoto, H. Sakurai, Y. Kukimoto, and K. Sugannuma, J. Electron. Mater. 37, 806–814 (2008).

    Article  Google Scholar 

  10. T.Y. Lin, C.N. Liao, and A.T. Wu, J. Electron. Mater. 41, 153–158 (2012).

    Article  Google Scholar 

  11. L. Maganin, V. Sirtori, S. Seregni, A. Origo, and P.L. Cavalloti, Electrochim. Acta 50, 4621–4625 (2005).

    Article  Google Scholar 

  12. Y.H. Chao, S.W. Chen, C.H. Wang, and C.C. Chen, Metall. Mater. Trans. A 39A, 477–488 (2008).

    Article  Google Scholar 

  13. C.H. Wang and C.Y. Kuo, J. Mater. Sci. 46, 2654–2661 (2011).

    Article  Google Scholar 

  14. H.C. Pan and T.E. Hsieh, Mater. Sci. Eng. B 177, 61–68 (2012).

    Article  Google Scholar 

  15. G. Chen, M.S. Dresselhaus, G. Dresselhaus, J.-P. Fleurial, and T. Caillat, Int. Mater. Rev. 48, 45–66 (2003).

    Article  Google Scholar 

  16. G.J. Snyder and E.S. Toberer, Nat. Mater. 7, 105–114 (2008).

    Article  Google Scholar 

  17. Z. Xiong, X. Chen, X. Huang, S. Bai, and L. Chen, Acta Mater. 58, 3995–4002 (2010).

    Article  Google Scholar 

  18. S. Bhattacharya and R.C. Mallik, J. Electron. Mater. 40, 1221–1232 (2011).

    Article  Google Scholar 

  19. W. Zhu, J. Wang, H. Liu, Z. Jin, and W. Gong, Mater. Sci. Eng. A 456, 109–113 (2007).

    Article  Google Scholar 

  20. V.I. Franchuk, L.N. Larikov, E.A. Maksimenko, and P.V. Mudruk, Met. Phys. Adv. Technol. 16, 145–154 (1996).

    Google Scholar 

  21. D.H. Kim, M.G. Cho, S.-K. Seo, and H.M. Lee, J. Electron. Mater. 38, 39–45 (2009).

    Article  Google Scholar 

  22. J. Chang, S.-K. Seo, M.G. Cho, D.N. Lee, K.-S. Kang, and H.M. Lee, J. Mater. Res. 27, 1877–1886 (2012).

    Article  Google Scholar 

  23. M. He, Z. Chen, and G. Qi, Acta Mater. 52, 2047 (2004).

    Article  Google Scholar 

  24. S.W. Chen, A.R. Zi, P.Y. Chen, H.S. Wu, Y.K. Chen, and C.H. Wang, Mater. Chem. Phys. 111, 17 (2008).

    Article  Google Scholar 

  25. J.W. Yoon and S.B. Jung, Microelectron. Reliab. 46, 905 (2006).

    Article  Google Scholar 

  26. M. He, Z. Chen, and G. Qi, Acta Mater. 52, 2047–2056 (2004).

    Article  Google Scholar 

  27. D.R. Flandersf, E.G. Jacobs, and R.F. Pinizzotto, J.␣Electron. Mater. 26, 883–887 (1997).

    Article  Google Scholar 

Download references

Acknowledgement

The authors acknowledge the financial support of␣the National Science Council of Taiwan (NSC 97-2221-E-007-067-MY3).

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Authors and Affiliations

  1. Department of Chemical Engineering, National Tsing Hua University, #101, Sec. 2, Kuang-Fu Road, Hsin-Chu, 300, Taiwan

    Sinn-wen Chen, Tung-Kai Chen, Jui-shen Chang & Wei-An Chen

  2. Department of Chemical Engineering, National United University, #2, Lien-Da Road, Miaoli, 360, Taiwan

    Chia-ming Hsu

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  1. Sinn-wen Chen
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  2. Tung-Kai Chen
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  3. Jui-shen Chang
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Correspondence to Sinn-wen Chen.

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Chen, Sw., Chen, TK., Chang, Js. et al. Interfacial Reactions in Sn-Ag/Co Couples. J. Electron. Mater. 43, 636–639 (2014). https://doi.org/10.1007/s11664-013-2927-y

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  • DOI: https://doi.org/10.1007/s11664-013-2927-y

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