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Irradiation-Induced Defects in Cd0.9Zn0.1Te:Al

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Abstract

The effects of gamma-irradiation, produced by a 60Co source with a dose of 2.7 kGy, on defect levels in a Cd0.9Zn0.1Te:Al (CZT:Al) crystal were investigated by thermally stimulated current spectroscopy. Nine observed defect levels were identified, and the irradiation-induced variations of trap signatures for these levels, i.e., the thermal activation energy, concentration, and capture cross-section, have been evaluated using simultaneous multiple peak analysis. In addition, the dark-current spectra dominated by the deep donor (E DD) level have been certified. By fitting plots of the logarithm of dark current ln(I DC) versus 1/kT, the E DD level is determined to be 0.554 ± 0.001 eV and 0.792 ± 0.004 eV before and after gamma-irradiation, respectively. One month after irradiation, the E DD level moved slightly to 0.782 ± 0.003 eV. This result indicates that the E DD level is closer to the middle of the bandgap of CZT:Al after irradiation, which should be responsible for Fermi-level pinning near the middle of the bandgap, leading to high resistivity. This is consistent with the resistivity variation of CZT:Al at room temperature from the original value of 7.5 × 109 Ω cm before irradiation to the irradiated value of 5.6 × 1010 Ω cm as determined by current–voltage measurements.

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Authors and Affiliations

  1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, 710072, China

    Ruihua Nan, Wanqi Jie, Gangqiang Zha, Yadong Xu & Hui Yu

  2. Science Institute, Air Force Engineering University, Xi’an, 710051, China

    Bei Wang

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  1. Ruihua Nan
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  2. Wanqi Jie
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  3. Gangqiang Zha
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  5. Yadong Xu
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  6. Hui Yu
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Correspondence to Ruihua Nan.

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Nan, R., Jie, W., Zha, G. et al. Irradiation-Induced Defects in Cd0.9Zn0.1Te:Al. J. Electron. Mater. 41, 3044–3049 (2012). https://doi.org/10.1007/s11664-012-2204-5

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  • DOI: https://doi.org/10.1007/s11664-012-2204-5

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