Abstract
A combined experimental and numerical simulation study is presented on two sets of nominally identical \(\hbox {Hg}_{1-x}\hbox {Cd}_{x}\hbox {Te}\) single-color back-illuminated midwave-infrared n-on-p photodetectors grown by liquid-phase epitaxy, p-doped with Hg vacancies and with Au, respectively. The present numerical model includes a novel formulation for band-to-band tunneling, which overcomes the intrinsic limitations of the classical Kane description without introducing numerical issues typical of other approaches. Our study confirms that adopting n-on-p architectures, avoiding metal vacancy doping, and reducing the acceptor density in the absorber region are prerequisites for obtaining high-operating-temperature photodetectors. A significant contribution to the dark current in both sets of devices is attributed to impact ionization, crucial to obtain a satisfactory explanation for the measured characteristics also at low to intermediate bias.
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Vallone, M., Mandurrino, M., Goano, M. et al. Numerical Modeling of SRH and Tunneling Mechanisms in High-Operating-Temperature MWIR HgCdTe Photodetectors. J. Electron. Mater. 44, 3056–3063 (2015). https://doi.org/10.1007/s11664-015-3767-8
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DOI: https://doi.org/10.1007/s11664-015-3767-8