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MBE HgCdTe on Alternative Substrates for FPA Applications

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Results of first-principles calculations and experiments focusing on molecular beam epitaxy (MBE) growth of HgCdTe on the alternative substrates of GaAs and Si are described. The As passivation on (2 × 1) reconstructed (211) Si and its effects on the surface polarity of ZnTe or CdTe were clarified by examining the bonding configurations of As. The quality of HgCdTe grown on Si was confirmed to be similar to that grown on GaAs. Typical surface defects in HgCdTe and CdTe were classified. Good results for uniformities of full width at half maximum (FWHM) values of x-ray rocking curves, surface defects, and x values of Hg1−x Cd x Te were obtained by refining the demanding parameters and possible tradeoffs. The sticking coefficient of As4 for MBE HgCdTe was determined. The effects of Hg-assisted annealing for As activation were investigated experimentally and theoretically by examining the difference of the formation energy of AsHg and AsTe. Results of focal-plane arrays (FPAs) fabricated with HgCdTe grown on Si and on GaAs are discussed.

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Acknowledgements

The authors would like to thank the research staff and graduate students for their contributions to this work by their tremendous experimental and theoretical efforts and vast amount of time; some of their names can be found in the references. This work was partially supported by the knowledge innovation program of the Chinese Academy of Sciences, the key fund of the Chinese National Science Foundation (10734090), and the Chinese National Science Foundation (10725418, 60476040, 60576068).

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Authors and Affiliations

  1. Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, CAS, Shanghai, 200083, China

    Li He, Xiangliang Fu, Qingzhu Wei, Weiqiang Wang, Lu Chen, Yan Wu, Xiaoning Hu, Jianrong Yang, Qinyao Zhang & Ruijun Ding

  2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, CAS, Shanghai, 200083, China

    Li He, Xiaoshuang Chen & Wei Lu

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  1. Li He
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Correspondence to Li He.

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He, L., Fu, X., Wei, Q. et al. MBE HgCdTe on Alternative Substrates for FPA Applications. J. Electron. Mater. 37, 1189–1199 (2008). https://doi.org/10.1007/s11664-008-0441-4

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